Title:
REFRACTIVE INDEX MEASURING DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/132991
Kind Code:
A1
Abstract:
In the present invention, a photodiode 3 includes semiconductor layers 9, 11, 12 and a gate insulation layer 13 which are provided on an embedded insulation layer 8 that is formed on a semiconductor silicon substrate 7, and on the gate insulation layer 13, disposed is a diffraction grating 6 in which a plurality of grooves 6a are formed in a 2D lattice-shape. Measurement light L emitted from a light source device 2 is guided by an optical system 30A that includes a photoelastic modulator 20, and the light is thereby incident on the photodiode 3. The measurement light L is emitted from the light source device 2 in a state of being linearly polarized light having a prescribed wavelength, and the light is transformed at a prescribed frequency by the optical system 30A so that repeated is a state in which two linearly polarized light beams which are orthogonally oriented are formed. An electrical signal from the photodiode 3, in the state in which the measurement light L has become two linearly polarized light beams which are orthogonally oriented, is subjected to lock-in detection.
Inventors:
INOKAWA HIROSHI (JP)
SATOH HIROAKI (JP)
ONO ATSUSHI (JP)
SATOH HIROAKI (JP)
ONO ATSUSHI (JP)
Application Number:
PCT/JP2016/053981
Publication Date:
August 25, 2016
Filing Date:
February 10, 2016
Export Citation:
Assignee:
UNIV SHIZUOKA NAT UNIV CORP (JP)
International Classes:
G01N21/41
Foreign References:
| JP2003028774A | 2003-01-29 | |||
| JP2014173920A | 2014-09-22 | |||
| JP2011209097A | 2011-10-20 | |||
| JP2005156414A | 2005-06-16 |
Other References:
HIROAKI SATO ET AL.: "Sensitivity Improvement in Refractive Index Measurement by Photodiode with Surface Plasmon Antenna", IEICE TECHNICAL REPORT, vol. 114, no. 442, 29 January 2015 (2015-01-29), pages 23 - 27
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
Download PDF: