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Patent Searching and Data


Title:
REMOVAL OF CMP AND POST-CMP RESIDUE FROM SEMICONDUCTORS USING SUPERCRITICAL CARBON DIOXIDE PROCESS
Document Type and Number:
WIPO Patent Application WO2004085491
Kind Code:
A3
Abstract:
A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Inventors:
MULLEE WILLIAM H
DE LEEUWE MARC
ROBERSON GLENN A JR
PALMER BENTLEY J
Application Number:
US2004009223W
Publication Date:
November 04, 2004
Filing Date:
March 24, 2004
Export Citation:
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Assignee:
TOKYO ELECTRON LIMITED
International Classes:
B08B3/12; B08B7/00; C11D11/00; H01L21/02; H01L21/306; (IPC1-7): H01L21/302; H01L21/461; C25F5/00; C03C23/00; C23G1/00; B08B3/00; B08B5/00
Foreign References:
US4944837A1990-07-31
US6021791A2000-02-08
US5679169A1997-10-21
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