RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

Title:

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

Document Type and Number:

WIPO Patent Application WO/2023/171670

Kind Code:

A1

Abstract:

This resist composition, which generates an acid by being exposed to light and of which the solubility in a developer changes due to the action of the acid, contains a resin component (A1) of which the solubility in a developer changes due to the action of the acid, the resin component (A1) having a constituent unit (a0) represented by general formula (a0-1). R is a hydrogen atom, a C1-5 alkyl group, a halogen atom, or a C1-5 halogenated alkyl group. Ya0 is a single bond or a divalent linking group. Va0 is a single bond or a straight-chain or branched-chain alkylene group. Mm+ is an m-valent cation.

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Inventors:

MIYAKAWA JUNICHI (JP)
ADACHI YOHEI (JP)
FUJINAMI TETSUO (JP)
ISHII SHUICHI (JP)

Application Number:

PCT/JP2023/008591

Publication Date:

September 14, 2023

Filing Date:

March 07, 2023

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Assignee:

TOKYO OHKA KOGYO CO LTD (JP)

International Classes:

G03F7/039; C07C309/12; C07C381/12; C07D307/00; C07D327/06; C07D333/46; C07D333/76; C08F12/20; C08F20/22; G03F7/004; G03F7/20

Domestic Patent References:

WO2011070947A1

2011-06-16

Foreign References:

JP2019182813A

2019-10-24

Attorney, Agent or Firm:

TAZAKI Akira et al. (JP)

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