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Patent Searching and Data


Title:
RESIST COMPOSITION FOR USE IN LITHOGRAPHY METHOD UTILIZING ELECTRON BEAM, X-RAY OR EUV LIGHT
Document Type and Number:
WIPO Patent Application WO/2008/044741
Kind Code:
A1
Abstract:
Disclosed is a resist composition for use in a lithography method utilizing electron beam, X-ray or EUV light. Specifically disclosed is a resist composition for use in a lithography method utilizing electron beam, X-ray or EUV light, comprising: a fluorinated polymer (F) which has a repeating unit (F) having a fluorinated aromatic ring structure in a side chain and whose alkali solubility can be increased by the action of an acid; and a compound capable of generating an acid. For example, the repeating unit (F) is a repeating unit (FV) [wherein RF represents a hydrogen atom, a halogen atom, a methyl group, or a halomethyl group (provided that three pieces of RF's may be the same as or different from one another); YF represents an acid-degradable group having 1 to 20 carbon atoms or a hydrogen atom; and p, q and r independently represent an integer of 0 to 5, provided that the sum total of p, q and r is 1 to 5].

Inventors:
SASAKI TAKASI (JP)
YOKOKOJI OSAMU (JP)
Application Number:
PCT/JP2007/069881
Publication Date:
April 17, 2008
Filing Date:
October 11, 2007
Export Citation:
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Assignee:
ASAHI GLASS CO LTD (JP)
SASAKI TAKASI (JP)
YOKOKOJI OSAMU (JP)
International Classes:
G03F7/039; C08F12/14; G03F7/004; H01L21/027
Foreign References:
JP2004157158A2004-06-03
JP2005292444A2005-10-20
JP2002220419A2002-08-09
Attorney, Agent or Firm:
SENMYO, Kenji et al. (SIA Kanda Square17, Kanda-konyach, Chiyoda-ku Tokyo 35, JP)
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