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Title:
RESIST COMPOUND AND RESIST COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2005/114331
Kind Code:
A1
Abstract:
A resist composition which comprises one or more resist compounds (A) satisfying all of the requirements of (a) having, in the molecule thereof, at least one crosslinking group undergoing a crosslinking reaction directly or indirectly by the irradiation with any radiation selected from the group consisting of a visible light, an ultraviolet ray, an excimer laser, an extreme ultraviolet ray (EUV), an electron beam, an X-ray and an ion beam, (b) having, in the molecule thereof, one or more functional groups selected from the group consisting of a urea group, a urethane group, an amino group and an imido group, (c) having a molecular weight of 500 to 5000, and (d) having a branched structure; and the resist compound. The above resist composition allows the formation of a resist pattern exhibiting an enhanced resolution, which results in the manufacture of a semiconductor element having a higher integration degree.

Inventors:
Oguro, Dai c/o Mitsubishi Gas Chemical Company Inc. (Hiratsuka Research Laboratory 6-2, Higashiyawata 5-chome, Hiratsuka-sh, Kanagawa 16, 25400, JP)
Echigo, Masatoshi c/o Mitsubishi Gas Chemical Company Inc. (Hiratsuka Research Laboratory 6-2, Higashiyawata 5-chome, Hiratsuka-sh, Kanagawa 16, 25400, JP)
Hayashi, Takeo c/o Mitsubishi Gas Chemical Company Inc. (Hiratsuka Research Laboratory 6-2, Higashiyawata 5-chome, Hiratsuka-sh, Kanagawa 16, 25400, JP)
Application Number:
PCT/JP2005/009249
Publication Date:
December 01, 2005
Filing Date:
May 20, 2005
Export Citation:
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Assignee:
MITSUBISHI GAS CHEMICAL COMPANY, INC. (5-2 Marunouchi 2-chome, Chiyoda-ku Tokyo, 24, 10083, JP)
Oguro, Dai c/o Mitsubishi Gas Chemical Company Inc. (Hiratsuka Research Laboratory 6-2, Higashiyawata 5-chome, Hiratsuka-sh, Kanagawa 16, 25400, JP)
Echigo, Masatoshi c/o Mitsubishi Gas Chemical Company Inc. (Hiratsuka Research Laboratory 6-2, Higashiyawata 5-chome, Hiratsuka-sh, Kanagawa 16, 25400, JP)
Hayashi, Takeo c/o Mitsubishi Gas Chemical Company Inc. (Hiratsuka Research Laboratory 6-2, Higashiyawata 5-chome, Hiratsuka-sh, Kanagawa 16, 25400, JP)
International Classes:
C07C271/28; C07C275/40; C07C275/62; C07D251/34; C07D405/14; C07F9/12; C07F9/18; C07F9/655; G03F7/027; G03F7/038; H01L21/027; (IPC1-7): G03F7/038; C07C271/28; C07C275/40; C07C275/62; C07D251/34; C07D405/14; C07F9/18; C07F9/655; G03F7/027; H01L21/027
Foreign References:
JP2000241970A2000-09-08
JPH0841151A1996-02-13
JPS5319059A1978-02-21
JPH10282649A1998-10-23
JP2004341482A2004-12-02
JP2003122002A2003-04-25
JP2004045447A2004-02-12
JPH09100458A1997-04-15
JPH02306955A1990-12-20
JP2003506507A2003-02-18
Attorney, Agent or Firm:
Ohtani, Tamotsu (OHTANI PATENT OFFICE, Bridgestone Toranomon Bldg. 6F. 25-2, Toranomon 3-chom, Minato-ku Tokyo 01, 10500, JP)
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