Title:
RESIST LOWER LAYER FILM FORMATION COMPOSITION IN WHICH CARBON-OXYGEN DOUBLE BOND IS USED
Document Type and Number:
WIPO Patent Application WO/2019/225615
Kind Code:
A1
Abstract:
Provided is a resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also provided are a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the resist lower layer film formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound (A) having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound (B) having 3-60 carbon atoms. The oxygen-containing compound (B) has, in one molecule, one partial structure: -CON< or -COO-. In the reaction product, one carbon atom of the oxygen-containing compound (B) links two of the aromatic compounds (A).
Inventors:
TOKUNAGA HIKARU (JP)
OGATA HIROTO (JP)
HASHIMOTO KEISUKE (JP)
NAKAJIMA MAKOTO (JP)
OGATA HIROTO (JP)
HASHIMOTO KEISUKE (JP)
NAKAJIMA MAKOTO (JP)
Application Number:
PCT/JP2019/020146
Publication Date:
November 28, 2019
Filing Date:
May 21, 2019
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
G03F7/11; C08G8/02; G03F7/20; G03F7/26
Domestic Patent References:
| WO2017188263A1 | 2017-11-02 | |||
| WO2017069063A1 | 2017-04-27 |
Foreign References:
| JP2015018223A | 2015-01-29 | |||
| JP2014029435A | 2014-02-13 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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