RESIST MATERIAL, METHOD FOR PRODUCING RESIST PATTERN, AND RESIST PATTERN - NATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECH

Title:

RESIST MATERIAL, METHOD FOR PRODUCING RESIST PATTERN, AND RESIST PATTERN

Document Type and Number:

WIPO Patent Application WO/2023/199659

Kind Code:

A1

Abstract:

For the purpose of providing a photoresist material having strong resistance to dry etching, this photoresist material according to one embodiment of the present invention is for use in extreme-ultraviolet lithography and comprises a metal oxide precursor or a polymer alloy containing at least one from among polycarbosilanes, polysiloxanes, polysilazanes, and polyorganoborosilazanes.

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JPS63261255	PHOTOSENSITIVE RESIN COMPOSITION
JP5644274	A base generator, a photosensitive resin composition, a pattern forming material composed of the photosensitive resin composition, a pattern forming method using the photosensitive resin composition, and an article.

Inventors:

YOSHIMURA KIMIO (JP)
IDESAKI AKIRA (JP)
YAMAMOTO HIROKI (JP)
DINH THANHHUNG (JP)
ISHINO MASAHIKO (JP)
NISHIKINO MASAHARU (JP)
MAEKAWA YASUNARI (JP)
KOZAWA TAKAHIRO (JP)

Application Number:

PCT/JP2023/009016

Publication Date:

October 19, 2023

Filing Date:

March 09, 2023

Export Citation:

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Assignee:

NATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECH (JP)

International Classes:

G03F7/075; G03F7/004; G03F7/20

Foreign References:

JPH11288087A	1999-10-19
JP2003277612A	2003-10-02
JPH08115863A	1996-05-07

Attorney, Agent or Firm:

HARAKENZO WORLD PATENT & TRADEMARK (JP)

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