Title:
RESIST MATERIAL FOR OXYGEN PLASMA ETCHING, RESIST FILM, AND LAMINATE USING SAME
Document Type and Number:
WIPO Patent Application WO/2015/137438
Kind Code:
A1
Abstract:
Provided is a resist material for oxygen plasma etching, which is a resist material for dry etching containing a composite resin (A) comprising a polysiloxane segment (a1) having structural units represented by general formula (1) and/or general formula (2), and a silanol group and/or a hydrolyzable silyl group, and a vinyl polymer segment (a2).The resist material for oxygen plasma etching is characterized in that the content of silicon atoms in the total solid content of the resist material for oxygen plasma etching is 15 to 45 wt%.
Inventors:
YAGI NAOTO (JP)
IBE TAKESHI (JP)
TANIMOTO HISASHI (JP)
YADA MAKOTO (JP)
IBE TAKESHI (JP)
TANIMOTO HISASHI (JP)
YADA MAKOTO (JP)
Application Number:
PCT/JP2015/057282
Publication Date:
September 17, 2015
Filing Date:
March 12, 2015
Export Citation:
Assignee:
DAINIPPON INK & CHEMICALS (JP)
International Classes:
H01L21/027; B29C59/02; C08G77/442; C08G81/02
Domestic Patent References:
| WO2011155365A1 | 2011-12-15 | |||
| WO2009063887A1 | 2009-05-22 |
Foreign References:
| JP2013051410A | 2013-03-14 |
Attorney, Agent or Firm:
KONO MICHIHIRO (JP)
Michihiro Kono (JP)
Michihiro Kono (JP)
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