RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

Title:

RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

Document Type and Number:

WIPO Patent Application WO/2010/038340

Kind Code:

A1

Abstract:

First, a resist film (102) is formed on a substrate (101) by using a resist material containing a monomer which is stable against acids and contains a halogen (fluorine) atom, a polymer which is stable against acids and contains fluorine, a polymer containing an acid-labile group, and a photoacid generator. Next, a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light, while arranging a liquid (103) on the resist film (102). Then, the pattern-exposed resist film (102) is developed, thereby forming a resist pattern (102b) from the resist film (102).

More Like This:

WO/2006/129697	PHOTOCURING/THERMOSETTING RESIN COMPOSITION, CURING/SETTING PRODUCT THEREOF AND PRINTED WIRING BOARD OBTAINED USING THE SAME
JP2005134873	METHOD FOR FORMING BELL-SHAPED PROJECTION STRUCTURE ON SURFACE OF PHOTOSENSITIVE POLYMER FILM
JP2009169049	PHOTOSENSITIVE RESIST COMPOSITION FOR COLOR FILTER AND COLOR FILTER

Inventors:

ENDOU, Masayuki (())
遠藤政孝 (())

Application Number:

JP2009/003259

Publication Date:

April 08, 2010

Filing Date:

July 10, 2009

Export Citation:

Click for automatic bibliography generation Help

Assignee:

PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
ENDOU, Masayuki (())

International Classes:

G03F7/004; G03F7/039; G03F7/38; H01L21/027; G03F7/004; G03F7/039; G03F7/38; H01L21/02

Attorney, Agent or Firm:

MAEDA, Hiroshi et al. (Osaka-Marubeni Bldg, 5-7Hommachi 2-chome, Chuo-ku, Osaka-sh, Osaka 53, 〒5410053, JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: NORMALLY-OFF PROTECTION ELEMENT AND CONTROL UNIT PROVIDED WITH SAME

Next Patent: IMAGE PROCESSING DEVICE