Title:
RESIST PATTERN COATING COMPOSITION INCLUDING VINYL GROUP- OR (METH) ACRYLOXY GROUP-CONTAINING POLYSILOXANE
Document Type and Number:
WIPO Patent Application WO/2017/043635
Kind Code:
A1
Abstract:
[Problem] To provide a coating composition for coating upon a resist pattern and reversing a pattern, in a solvent development lithography process. [Solution] A composition coated on a resist pattern and including: a polysiloxane being a hydrolysis condensate of a hydrolyzable silane; and a carboxylic acid ester solvent or an ester solvent. The hydrolyzable silane includes a vinyl group or a (meth) acryloxy group. The hydrolyzable silane contains 20-100 mol% of hydrolyzable silane including a vinyl group or a (meth) acryloxy group, relative to the total hydrolyzable silane. A production method for a semiconductor device, including: a step (1) in which a resist is coated upon a substrate; a step (2) in which the resist film is exposed then developed and a resist pattern is formed; a step (3) in which the composition is coated upon the resist pattern during or after developing; and a step (4) in which the resist pattern is removed by etching and the pattern is reversed.
Inventors:
SHIGAKI SHUHEI (JP)
SAKAMOTO RIKIMARU (JP)
NAKAJIMA MAKOTO (JP)
SHIBAYAMA WATARU (JP)
SAKAMOTO RIKIMARU (JP)
NAKAJIMA MAKOTO (JP)
SHIBAYAMA WATARU (JP)
Application Number:
PCT/JP2016/076644
Publication Date:
March 16, 2017
Filing Date:
September 09, 2016
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
International Classes:
G03F7/40; G03F7/20; H01L21/027; C08G77/20
Domestic Patent References:
| WO2012128251A1 | 2012-09-27 | |||
| WO2010123032A1 | 2010-10-28 | |||
| WO2015025665A1 | 2015-02-26 |
Foreign References:
| JP2008287176A | 2008-11-27 | |||
| JP2009301007A | 2009-12-24 | |||
| JP2014106298A | 2014-06-09 | |||
| JP2009217250A | 2009-09-24 | |||
| JP2009251216A | 2009-10-29 |
Other References:
RIKIMARU SAKAMOTO ET AL.: "Dry Development Rinse Process (DDRP) and Material (DDRM) for Novel pattern collapse free process", PROCEEDINGS OF SPIE, vol. 8682, 29 March 2013 (2013-03-29), pages 868205, XP055359070
RIKIMARU SAKAMOTO ET AL.: "Dry development rinse (DDR) process and material for ArF/EUV extension technique toward 1Xnm hp and beyond", PROCEEDINGS OF SPIE, vol. 9425, 20 March 2015 (2015-03-20), pages 942512, XP060051763
RIKIMARU SAKAMOTO ET AL.: "Dry development rinse (DDR) process and material for ArF/EUV extension technique toward 1Xnm hp and beyond", PROCEEDINGS OF SPIE, vol. 9425, 20 March 2015 (2015-03-20), pages 942512, XP060051763
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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