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Patent Searching and Data


Title:
RESIST PATTERN FORMATION METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL
Document Type and Number:
WIPO Patent Application WO/2019/194018
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a resist pattern formation method that can form a resist pattern having a high sensitivity and an excellent nanoedge roughness. The present invention is a pattern formation method that includes a coating step, a partial irradiation step, a whole-surface irradiation step, a heating step, and a development step, wherein a chemically amplified resist material contains a base component (1) that becomes soluble or insoluble in the developing solution under the action of an acid, and a component (2) that produces a photosensitizer and an acid under the action of the first exposure light. The component (2) contains a radiation-sensitive onium cation and an anion. The radiation-sensitive onium cation has two or more 6- to 20-membered aromatic carbocyclic rings bonded to the onium atom, wherein at least one of the aromatic carbocyclic rings has a substituent and at least one of the aromatic carbocyclic rings has a hydrogen atom bonded to a carbon atom in para-position relative to the onium atom. The anion is represented by formula (3-1) or (3-2).

Inventors:
FUCHIWAKI JUNTA (JP)
NAGAI TOMOKI (JP)
Application Number:
PCT/JP2019/012617
Publication Date:
October 10, 2019
Filing Date:
March 25, 2019
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; G03F7/039; G03F7/20; G03F7/38
Foreign References:
JP2018025739A2018-02-15
JP2017054116A2017-03-16
JP2017040833A2017-02-23
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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