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Patent Searching and Data


Title:
RESIST PATTERN FORMATION METHOD AND COMPOSITION FOR RESIST FILM FORMATION
Document Type and Number:
WIPO Patent Application WO/2019/111665
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for forming a resist pattern having a high sensitivity and being easily removable and a composition for resist film formation. The resist pattern formation method according to the present invention comprises a coating step for coating a substrate with a composition for resist film formation, a step for irradiating the resist film formed by the coating step with ultraviolet light or an electron beam, and a step for developing the irradiated resist film using an organic solvent-containing liquid, wherein the composition for resist film formation comprises a polygermanoxane having a structural unit represented by formula (1) and a solvent. In formula (1), R1 represents a monovalent organic group carrying 1-30 carbon atoms and bonding, via a carbon atom, to a Ge atom. Preferably, the organic group R1 is an unsubstituted chain hydrocarbon group. Preferably, the organic group R1 is an unsubstituted saturated hydrocarbon group. Preferably, the carbon atom bonding to the Ge atom in the organic group R1 is a secondary carbon atom or a tertiary carbon atom.

Inventors:
MINEGISHI SHINYA (JP)
NARUOKA TAKEHIKO (JP)
NAGAI TOMOKI (JP)
NAKAGAWA HISASHI (JP)
Application Number:
PCT/JP2018/042192
Publication Date:
June 13, 2019
Filing Date:
November 14, 2018
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; C08G79/00; G03F7/20; G03F7/32
Foreign References:
JP2003215792A2003-07-30
JP2014182201A2014-09-29
JP2003172802A2003-06-20
JP2002338304A2002-11-27
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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