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Title:
RESIST PATTERN FORMING METHOD AND METHOD FOR DETERMINING DEVELOPMENT CONDITIONS
Document Type and Number:
WIPO Patent Application WO/2017/115622
Kind Code:
A1
Abstract:
This resist pattern forming method comprises: a step for forming a resist film with use of a positive resist composition that con tains a solvent and a polymer having an α-methylstyrene unit and an α- methyl chloroacrylate unit; a step for exposing the resist film to light; and a step for developing the resist film, which has been exposed to light. The ratio of a component of the polymer having a molecular weight of more than 100,000 is 13% or less; and the development is carried out under such conditions that the film retention ratio at the irradiance of 0.95 Eth is 0.250 or more.

Inventors:
HOSHINO MANABU (JP)
Application Number:
PCT/JP2016/086273
Publication Date:
July 06, 2017
Filing Date:
December 06, 2016
Export Citation:
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Assignee:
ZEON CORP (JP)
International Classes:
G03F7/039; G03F7/32
Domestic Patent References:
WO2016132723A12016-08-25
WO2016132728A12016-08-25
Foreign References:
JPH02197846A1990-08-06
JPS5983157A1984-05-14
JP2016012104A2016-01-21
JP2016218321A2016-12-22
JPH03132760A1991-06-06
JP2009132640A2009-06-18
JP2009134020A2009-06-18
Other References:
YAMAGUCHI T. ET AL.: "Influence of molecular weight of resist polymers on surface roughness and line-edge roughness", J. VAC. SCI. TECHNOL. B, vol. 22, no. 6, 2004, pages 2604 - 2610, XP012074677, DOI: doi:10.1116/1.1805546
GENTARO NAGAMATSU: "Hideo INUI , Kankosei Kobunshi", KODANSHA LTD., 1 September 1978 (1978-09-01), pages 66 - 67
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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