Title:
RESIST RESIN, CHEMICAL AMPLIFICATION TYPE RESIST, AND METHOD OF FORMING PATTERN WITH THE SAME
Document Type and Number:
WIPO Patent Application WO/2002/005034
Kind Code:
A1
Abstract:
A resist resin in which acid-decomposable groups decompose by the action of an acid to increase the solubility of the resin in an aqueous alkali solution, characterized by having in the main chain an alicyclic lactone structure represented by the general formula (1). The resist resin is highly transparent to far-infrared rays having a wavelength of about 220 nm or shorter, has excellent etching resistance, and gives a positive, chemically amplified resist having excellent substrate adhesion. Thus, a fine pattern necessary for semiconductor element production can be formed. (1) (In the formula, Z is an alicyclic hydrocarbon group having a lactone structure.)
More Like This:
Inventors:
MAEDA KATSUMI (JP)
IWASA SHIGEYUKI (JP)
NAKANO KAICHIRO (JP)
HASEGAWA ETSUO (JP)
IWASA SHIGEYUKI (JP)
NAKANO KAICHIRO (JP)
HASEGAWA ETSUO (JP)
Application Number:
PCT/JP2001/005693
Publication Date:
January 17, 2002
Filing Date:
July 02, 2001
Export Citation:
Assignee:
NEC CORP (JP)
MAEDA KATSUMI (JP)
IWASA SHIGEYUKI (JP)
NAKANO KAICHIRO (JP)
HASEGAWA ETSUO (JP)
MAEDA KATSUMI (JP)
IWASA SHIGEYUKI (JP)
NAKANO KAICHIRO (JP)
HASEGAWA ETSUO (JP)
International Classes:
C08F34/02; C08F220/10; C08F222/06; C08G61/06; C08G61/08; C08G61/12; G03F7/039; H01L21/027; H01L21/312; (IPC1-7): G03F7/039; C08F232/00; C08F220/10; C08F222/06; C08G61/12; H01L21/027
Foreign References:
| JPH10218941A | 1998-08-18 | |||
| JP2000038416A | 2000-02-08 | |||
| JPH11305444A | 1999-11-05 | |||
| JPH10130340A | 1998-05-19 | |||
| GB2332679A | 1999-06-30 | |||
| US6063542A | 2000-05-16 | |||
| JP2000047387A | 2000-02-18 | |||
| JP2001215703A | 2001-08-10 | |||
| JP2001081139A | 2001-03-27 |
Attorney, Agent or Firm:
Kaneda, Nobuyuki (16th Kowa Bldg. 9-20 Akasaka 1-chome Minato-ku, Tokyo, JP)
Download PDF: