RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING SAME

WIPO Patent Application WO/2012/067040

A1

[Problem] The purpose of the present invention is to obtain a composition for forming a resist underlayer film, the composition having a high selectivity of the dry etching speed even though the composition contains an aromatic ring such as a benzene ring, and being useful in lowering LER which presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, the purpose of the present invention is to obtain a composition for forming a resist underlayer film, wherein the resist pattern on the resist underlayer film has a desired shape. [Solution] A resist underlayer film forming composition for lithography characterized by containing a polymer and a solvent, and by diphenyl sulfone or a derivative thereof being introduced into the main chain of the polymer via an ether bond.

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SAKAMOTO RIKIMARU (JP)
FUJITANI NORIAKI (JP)
ENDO TAKAFUMI (JP)
OHNISHI RYUJI (JP)
HO BANGCHING (JP)

PCT/JP2011/076083

May 24, 2012

November 11, 2011

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NISSAN CHEMICAL IND LTD (JP)
SAKAMOTO RIKIMARU (JP)
FUJITANI NORIAKI (JP)
ENDO TAKAFUMI (JP)
OHNISHI RYUJI (JP)
HO BANGCHING (JP)

G03F7/11; C08G59/62; C08G65/40; H01L21/027

WO2009075265A1	2009-06-18
WO2009057458A1	2009-05-07
WO2010061774A1	2010-06-03

JP2008015223A	2008-01-24
JP2006501320A	2006-01-12
JP2005352133A	2005-12-22

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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