RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYHYDROXYBENZENE NOVOLAC RESIN

WIPO Patent Application WO/2012/176767

A1

[Problem] To provide a resist underlayer film forming composition which is provided with heat resistance and pattern bending resistance that are required for use in a lithography process for the production of semiconductor devices. [Solution] A resist underlayer film forming composition for lithography, which contains a polymer having a unit structure represented by formula (1). (In formula (1), A represents a hydroxy group-substituted phenylene group that is derived from a polyhydroxybenzene, and B represents a monovalent fused aromatic hydrocarbon ring group wherein two to six benzene rings are fused.) In this connection, A is a hydroxy group-substituted phenylene group which is derived from catechol, resorcinol, hydroquinone, pyrogallol, hydroxyquinol or phloroglucinol; the fused aromatic hydrocarbon ring group represented by B is a naphthalene ring group, an anthracene ring group or a pyrene ring group; and the fused aromatic hydrocarbon ring group represented by B comprises, as a substituent, a halogen group, a hydroxy group, a nitro group, an amino group, a carboxyl group, a carboxylic acid ester group, a nitrile group, or a combination of two or more of these groups.

KARASAWA RYO (JP)
SHINJO TETSUYA (JP)
HASHIMOTO KEISUKE (JP)
SOMEYA YASUNOBU (JP)

PCT/JP2012/065625

December 27, 2012

June 19, 2012

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NISSAN CHEMICAL IND LTD (JP)
KARASAWA RYO (JP)
SHINJO TETSUYA (JP)
HASHIMOTO KEISUKE (JP)
SOMEYA YASUNOBU (JP)

G03F7/11; C08G8/20; H01L21/027

WO2009119201A1	2009-10-01
WO2011034062A1	2011-03-24

JP2010117629A

2010-05-27

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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