RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING COPOLYMER RESIN HAVING HETEROCYCLIC RING

WIPO Patent Application WO/2013/115097

A1

[Problem] To provide a resist underlayer film forming composition for forming a resist underlayer film that has dry etching resistance and heat resistance at the same time. [Solution] A resist underlayer film forming composition which contains a polymer that has a unit structure represented by formula (1). In formula (1), it is preferable that R3 is a hydrogen atom, and both n1 and n2 are 0. A method for manufacturing a semiconductor device, which comprises: a step wherein an underlayer film is formed on a semiconductor substrate with use of a resist underlayer film forming composition of the present invention; a step wherein a hard mask is formed on the underlayer film; a step wherein a resist film is formed on the hard mask; a step wherein a resist pattern is formed by irradiation of light or electron beams and development; a step wherein the hard mask is etched with use of the resist pattern; a step wherein the underlayer film is etched with use of the patterned hard mask; and a step wherein the semiconductor substrate is processed with use of the patterned underlayer film.

SOMEYA YASUNOBU (JP)
HASHIMOTO KEISUKE (JP)
SHINJO TETSUYA (JP)
NISHIMAKI HIROKAZU (JP)
KARASAWA RYO (JP)
SAKAMOTO RIKIMARU (JP)

PCT/JP2013/051598

August 08, 2013

January 25, 2013

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NISSAN CHEMICAL IND LTD (JP)

G03F7/11; C08G12/26; C08L61/30; G03F7/26; G03F7/40; H01L21/027

WO2010147155A1

2010-12-23

JP2007297540A	2007-11-15
JP2005128509A	2005-05-19
JPH10152636A	1998-06-09
JPH01304149A	1989-12-07
JP2012214720A	2012-11-08

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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