RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS PHENYLINDOLE-CONTAINING NOVOLAC RESIN

Title:

RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS PHENYLINDOLE-CONTAINING NOVOLAC RESIN

Document Type and Number:

WIPO Patent Application WO/2013/146670

Kind Code:

A1

Abstract:

[Problem] To provide a resist underlayer film-forming composition for use in a lithography process for the production of a semiconductor device, said composition having heat resistance. [Solution] A resist underlayer film-forming composition which contains a polymer that has a unit structure represented by formula (1). In the formula, both ring A and ring B represent benzene rings; n1, n2 and n3 are 0; each of R4 and R6 represents a hydrogen atom; and R5 represents a naphthyl group. A method for producing a semiconductor device, which comprises: a step of forming an underlayer film on a semiconductor substrate using the above-described resist underlayer film-forming composition; a step of forming a hard mask on the underlayer film; a step of forming a resist film on the hard mask; a step of forming a resist pattern by irradiation of light or an electron beam and development; a step of etching the hard mask with use of the resist pattern; a step of etching the underlayer film with use of the patterned hard mask; and a step of processing the semiconductor substrate with use of the patterned underlayer film.

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Inventors:

NISHIMAKI HIROKAZU (JP)
SAKAMOTO RIKIMARU (JP)
HASHIMOTO KEISUKE (JP)
SHINJO TETSUYA (JP)
SOMEYA YASUNOBU (JP)
KARASAWA RYO (JP)

Application Number:

PCT/JP2013/058557

Publication Date:

October 03, 2013

Filing Date:

March 25, 2013

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Assignee:

NISSAN CHEMICAL IND LTD (JP)

International Classes:

G03F7/11; C08G12/26

Domestic Patent References:

WO2010147155A1	2010-12-23
WO2003068837A1	2003-08-21

Foreign References:

JP2007297538A

2007-11-15

Attorney, Agent or Firm:

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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