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Title:
RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING HALOGEN-CONTAINING CARBOXYLIC ACID AMIDE GROUP
Document Type and Number:
WIPO Patent Application WO/2016/093172
Kind Code:
A1
Abstract:
[Problem] To provide a resist underlayer film forming composition for lithography, which is able to be used as a hard mask. Pattern resolution is able to be improved by having the composition contain a trihalogenoacetamide skeleton. [Solution] A resist underlayer film forming composition for lithography, which contains, as a silane, a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof or a combination of these compounds, and wherein the hydrolyzable silane contains a silane having a halogen-containing carboxylic acid amide group.

Inventors:
SHIBAYAMA WATARU (JP)
TAKASE KENJI (JP)
SAKAMOTO RIKIMARU (JP)
Application Number:
PCT/JP2015/084172
Publication Date:
June 16, 2016
Filing Date:
December 04, 2015
Export Citation:
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Assignee:
NISSAN CHEMICAL IND LTD (JP)
International Classes:
G03F7/11; C08G77/26; G03F7/26; H01L21/027
Domestic Patent References:
WO2013161372A12013-10-31
WO2011105368A12011-09-01
WO2010071155A12010-06-24
Foreign References:
JP2008158002A2008-07-10
JP2007226170A2007-09-06
Other References:
GANESAN RAMAKRISHNAN ET AL.: "Top surface imaging study by selective chemisorptions of poly(dimethyl siloxane) on diazoketo-functionalized polymeric surface", PROC. OF SPIE, vol. 6792, 17 April 2008 (2008-04-17), pages 679202 - 1-12
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
A patent business corporation is a なぶさ patent trademark office. (JP)
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