RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING NAPHTHOL ARALKYL RESIN

WIPO Patent Application WO/2017/183612

A1

[Problem] To provide a resist underlayer film for lithography, which does not undergo intermixing with a resist layer, has high dry etching resistance and high heat resistance, exhibits a low mass decrease at high temperatures and exhibits even coverage of an uneven substrate; and a resist underlayer film-forming composition for forming the resist underlayer film. [Solution] A resist underlayer film-forming composition that contains a polymer containing a unit structure represented by formula (1). The unit structure represented by formula (1) is the unit structure represented by formula (2). Provided is a method for producing a semiconductor device, which includes a step of forming a resist underlayer film on a semiconductor substrate using the resist underlayer film-forming composition, a step of forming a hard mask on the resist underlayer film, a step of further forming a resist film on the hard mask, a step of forming a resist pattern by irradiating and developing the resist with light or an electron beam, a step of forming a pattern by etching the hard mask by means of the resist pattern, a step of forming a pattern by etching the underlayer film by means of the patterned hard mask, and a step of processing the semiconductor substrate by means of the patterned resist underlayer film.

KARASAWA RYO (JP)
HASHIMOTO KEISUKE (JP)

PCT/JP2017/015490

October 26, 2017

April 17, 2017

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NISSAN CHEMICAL IND LTD (JP)

G03F7/11; G03F7/20; G03F7/26; H01L21/027

WO2014185335A1

2014-11-20

JP2010524224A	2010-07-15
US20150004531A1	2015-01-01
JP2015018223A	2015-01-29
US20160126088A1	2016-05-05

HANABUSA PATENT & TRADEMARK OFFICE (JP)

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