Title:
RESIST UNDERLAYER FILM FORMING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2023/189803
Kind Code:
A1
Abstract:
The present invention provides: a resist underlayer film forming composition which exhibits excellent filling properties and planarization properties with respect to a substrate with level difference, while having high storage stability of a polymer that serves as a main component of a resist underlayer film; a resist pattern forming method which uses this resist underlayer film forming composition; and a method for producing a semiconductor device, the method using this resist underlayer film forming composition. The present invention provides a resist underlayer film forming composition which contains (a) a thermal acid generator that is represented by formula (I), (b) a polymer that contains an aromatic ring, (c) a base B2 and (d) a solvent. In formula (I), A1 represents an optionally substituted linear, branched or cyclic, saturated or unsaturated aliphatic hydrocarbon group, or an optionally substituted aromatic ring residue. In formula (1), B1 represents a counter base; and at least one base among B1 and B2 has a higher pKa than pyridine.
Inventors:
TOKUNAGA HIKARU (JP)
NAKAJIMA MAKOTO (JP)
NISHIMAKI HIROKAZU (JP)
NAKAJIMA MAKOTO (JP)
NISHIMAKI HIROKAZU (JP)
Application Number:
PCT/JP2023/010827
Publication Date:
October 05, 2023
Filing Date:
March 20, 2023
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
G03F7/11; C08G12/08; G03F7/20
Domestic Patent References:
| WO2014129582A1 | 2014-08-28 | |||
| WO2022196606A1 | 2022-09-22 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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