Title:
RESISTANCE CHANGE ELEMENT, MANUFACTURING METHOD THEREOF, MEMORY INCLUDING THE ELEMENT, AND DRIVE METHOD OF THE MEMORY
Document Type and Number:
WIPO Patent Application WO/2005/041303
Kind Code:
A1
Abstract:
There is provided a resistance change element which can lower the drive voltage of an RRAM expected to be a high-speed memory having a low power consumption and suppress irregularities of the electric pulse width for realizing the same resistance change. The resistance change element includes a first electrode, a layer formed on the first electrode and having a resistance changed by applying an electric pulse, and a second electrode formed on this layer. The layer has a perovskite structure. The layer has at least one of a concave portion and a convex portion at the boundary with at least one of the first electrode and the second electrode.
Inventors:
SUGITA YASUNARI
ODAGAWA AKIHIRO
ADACHI HIDEAKI
YOTSUHASHI SATOSHI
KANNO TSUTOMU
OHNAKA KIYOSHI
ODAGAWA AKIHIRO
ADACHI HIDEAKI
YOTSUHASHI SATOSHI
KANNO TSUTOMU
OHNAKA KIYOSHI
Application Number:
PCT/JP2004/015728
Publication Date:
May 06, 2005
Filing Date:
October 22, 2004
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
SUGITA YASUNARI
ODAGAWA AKIHIRO
ADACHI HIDEAKI
YOTSUHASHI SATOSHI
KANNO TSUTOMU
OHNAKA KIYOSHI
SUGITA YASUNARI
ODAGAWA AKIHIRO
ADACHI HIDEAKI
YOTSUHASHI SATOSHI
KANNO TSUTOMU
OHNAKA KIYOSHI
International Classes:
G11C13/00; H01L21/02; H01L27/24; H01L45/00; G11C11/56; (IPC1-7): H01L27/105; G11C13/00
Foreign References:
| JP2003068984A | 2003-03-07 | |||
| JP2003188349A | 2003-07-04 | |||
| JPH11121624A | 1999-04-30 | |||
| JPH0945780A | 1997-02-14 | |||
| JP2003068854A | 2003-03-07 | |||
| JPH1166654A | 1999-03-09 |
Other References:
ZHUANG W.W. ET AL.: "Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)", INTERNATIONAL ELECTRON DEVICES MEETING, 2002, pages 193 - 196, XP010626021
Attorney, Agent or Firm:
Kamada, Koichi (TOMOE MARION BLDG. 4-3-1, Nishitenma, Kita-k, Osaka-shi Osaka 47, JP)
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