Title:
RESISTANCE CHANGE ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/075471
Kind Code:
A1
Abstract:
[PROBLEMS] To provide a resistance change element, which can render the amount of current flown per cell smaller than that in the prior art technique, and a method for manufacturing the same. [MEANS FOR SOLVING PROBLEMS] A resistance change memory (ReRAM) for storing data by taking advantage of a change in resistance of a resistance change element (70), wherein the resistance change memory comprises a lower electrode (a ground-side electrode) (67a) of the resistance change element (70) formed of a transition metal such as Ni, and an upper electrode (a positive electrode-side electrode) (69a) formed of a noble metal such as Pt. A transition metal oxide film (68a) is provided between the lower electrode (67a) and the upper electrode (69a). The transition metal oxide film (68a) is, for example, an oxide film of a transition metal of the same type as the transition metal constituting the lower electrode (67a) (NiOx film).
Inventors:
NOSHIRO, Hideyuki (1-1 Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-sh, Kanagawa 88, 2118588, JP)
Application Number:
JP2007/060451
Publication Date:
June 26, 2008
Filing Date:
May 22, 2007
Export Citation:
Assignee:
FUJITSU LIMITED (1-1 Kamikodanaka 4-chome, Nakahara-ku Kawasaki-sh, Kanagawa 88, 2118588, JP)
富士通株式会社 (〒88 神奈川県川崎市中原区上小田中４丁目１番１号 Kanagawa, 2118588, JP)
富士通株式会社 (〒88 神奈川県川崎市中原区上小田中４丁目１番１号 Kanagawa, 2118588, JP)
International Classes:
H01L27/10
Attorney, Agent or Firm:
OKAMOTO, Keizo (OKAMOTO PATENT OFFICE Yamanishi Bldg, 4F 11-7, Nihonbashi Ningyo-cho 3-chome, Chuo-k, Tokyo 13, 1030013, JP)
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