Title:
RESISTANCE-CHANGE NON-VOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/119671
Kind Code:
A1
Abstract:
A resistance-change non-volatile memory device (100) is provided with memory cells (M11, M12,...), each comprising a resistance-change element (R11, R12,...) and a current control element (D11, D12,...) connected in series. The resistance-change elements constitute a resistance-change layer interposed between a first electrode and a second electrode and provided so as to contact both electrodes. The current control elements constitute a current control layer interposed between a third electrode and a fourth electrode and provided so as to contact both electrodes. To decrease the resistance of the resistance-change elements, said elements are driven by a first LR drive circuit (105a1), via a current control circuit (105b). To increase the resistance of the resistance-change elements, the elements are driven by a second HR drive circuit (105a2). The current control circuit (105b) makes the current lower when decreasing the resistance of the resistance-change elements than when increasing the resistance thereof.
Inventors:
IKEDA YUUICHIROU
SHIMAKAWA KAZUHIKO
KANZAWA YOSHIHIKO
MURAOKA SHUNSAKU
AZUMA RYOTARO
SHIMAKAWA KAZUHIKO
KANZAWA YOSHIHIKO
MURAOKA SHUNSAKU
AZUMA RYOTARO
Application Number:
PCT/JP2010/002683
Publication Date:
October 21, 2010
Filing Date:
April 14, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
IKEDA YUUICHIROU
SHIMAKAWA KAZUHIKO
KANZAWA YOSHIHIKO
MURAOKA SHUNSAKU
AZUMA RYOTARO
IKEDA YUUICHIROU
SHIMAKAWA KAZUHIKO
KANZAWA YOSHIHIKO
MURAOKA SHUNSAKU
AZUMA RYOTARO
International Classes:
H01L27/10; G11C13/00; H01L45/00
Domestic Patent References:
| WO2008142919A1 | 2008-11-27 | |||
| WO2008012871A1 | 2008-01-31 |
Foreign References:
| JP4253038B2 | 2009-04-08 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house extensive 守 (JP)
New house extensive 守 (JP)
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