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Title:
RESISTANCE-CHANGE TYPE NONVOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/131025
Kind Code:
A1
Abstract:
This resistance-change type nonvolatile storage device has: a memory cell array that has a plurality of memory cells (10); a writing circuit that executes writing in the memory cells (10); and a control circuit. Each of the memory cells (10) has a resistance-change type nonvolatile storage element (12) and a cell transistor (14) that is serially connected to the storage element (12). The writing circuit has a source line drive circuit (20) that is connected to the cell transistor (14), and a bit line drive circuit (40) that is connected to the storage element (12). The control circuit executes control for supplying a current of a first current value to the storage element (12), and then executes control for supplying a current of a second current value to the storage element (12) when carrying out a writing operation for bringing the storage element (12) into a low-resistance state. The second current value is larger than the current overshoot maximum value of the storage element (12) after change of the storage element (12) to the low-resistance state has been started.

Inventors:
MOCHIDA, Reiji
KOUNO, Kazuyuki
ONO, Takashi
NAKAYAMA, Masayoshi
HAYATA, Yuriko
Application Number:
JP2018/044775
Publication Date:
July 04, 2019
Filing Date:
December 05, 2018
Export Citation:
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Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
International Classes:
G11C13/00; G11C11/16; H01L21/8239; H01L27/105
Domestic Patent References:
WO2016072173A12016-05-12
Foreign References:
US20040227166A12004-11-18
JP2011243265A2011-12-01
Attorney, Agent or Firm:
NII, Hiromori et al. (6F Tanaka Ito Pia Shin-Osaka Bldg., 3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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