RESISTANCE CHANGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2017/051527

A1

The purpose of the present invention is to enable manufacture of a metal-precipitating resistance changing element in which variations in program voltage and high-resistance-state leak current are decreased while decreasing the program voltage. The resistance changing element of the present invention comprises: a first insulating film disposed on a semiconductor substrate having a transistor formed therein; first and second electrodes which are embedded in the first insulating film and which supply metal ions; a second insulating film covering the first insulating film and the first and second electrodes; first and second opening portions which expose a part of upper surfaces of the first and second electrodes including end portions thereof from the second insulating film while having translation symmetry; metal-precipitating first and second resistance changing films which respectively cover the first and second opening portions and which are connected, in the opening portions, to the part of the upper surfaces of the first and second electrodes including the end portions; third and fourth electrodes respectively connected to the upper surfaces of the first and second resistance changing films; and a fifth electrode connected to the third and fourth electrodes and to a diffusion layer of the transistor.

SAKAMOTO TOSHITSUGU (JP)
TADA MUNEHIRO (JP)

PCT/JP2016/004240

March 30, 2017

September 16, 2016

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NEC CORP (JP)

H01L27/105; H01L45/00; H01L49/00

WO2014112365A1	2014-07-24
WO2013018842A1	2013-02-07

JP2009021602A

2009-01-29

SHIMOSAKA, Naoki (JP)

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