Title:
RESISTANCE RANDOM ACCESS MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/143960
Kind Code:
A1
Abstract:
Provided is a resistance random access memory device comprising: a first electrode; a second electrode; and a metallic oxide formed between the first electrode and the second electrode. Particularly, provided is a resistance random access memory device wherein the metallic oxide comprises a first crystal grain and a second crystal grain which differ from each other in crystallographic orientation and form a boundary area; wherein a surface is intervened between the first crystal grain and the second crystal grain in the boundary area, the surface having a surface index corresponding to a surface crystallographically consisting only of oxygen among the crystal faces of the metallic oxide; and wherein the boundary area is a surface in which an electrically conductive path is formed when voltage is applied between the first electrode and the second electrode.
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Inventors:
KWON DEOK HWANG (KR)
KIM MI YOUNG (KR)
KIM MI YOUNG (KR)
Application Number:
PCT/KR2015/008899
Publication Date:
September 15, 2016
Filing Date:
August 26, 2015
Export Citation:
Assignee:
UNIV SEOUL NAT R & DB FOUND (KR)
International Classes:
H01L27/115; H01L27/24
Foreign References:
| JP2013201276A | 2013-10-03 | |||
| JP2013069869A | 2013-04-18 | |||
| JP2012084774A | 2012-04-26 | |||
| KR20130139217A | 2013-12-20 | |||
| US20130258740A1 | 2013-10-03 |
Attorney, Agent or Firm:
KIM, Nam Sik et al. (KR)
김남식 (KR)
김남식 (KR)
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