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Title:
RESISTANCE SWITCHING DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/125421
Kind Code:
A1
Abstract:
Provided is a resistance switching device having a high resistance variation ratio, excellent responsiveness, and excellent resistance memory characteristics (retention characteristics) and repetition durability. A resistance switching device (1a) provided with an n-type oxide semiconductor (2) and first and second electrodes (3, 4) arranged so as to face each other with at least a part of the n-type oxide semiconductor (2) interposed therebetween, voltages having different polarities being applied between the first and second electrodes (3, 4), whereby a Schottky junction exhibiting resistance variation and memory characteristics is formed at the interface between the n-type oxide semiconductor (2) and the first electrode (3), wherein the first electrode (3) is positioned so as to be in contact with the n-type oxide semiconductor (2), and comprises a lower layer (5) that has a thickness of 1 to 50 nm and is formed using a Pt or Au oxide, or oxygen-containing Pt or Au, and an upper layer (6) that is formed on the lower layer (5) and comprises Au or Pt.

Inventors:
HIROSE SAKYO (JP)
OHASHI NAOKI (JP)
YOSHIKAWA HIDEKI (JP)
Application Number:
JP2013/053457
Publication Date:
August 29, 2013
Filing Date:
February 14, 2013
Export Citation:
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Assignee:
MURATA MANUFACTURING CO., LTD. (10-1, Higashikotari 1-chome Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
株式会社村田製作所 (〒55 京都府長岡京市東神足1丁目10番1号 Kyoto, 〒6178555, JP)
International Classes:
H01L27/105; H01L29/47; H01L29/872; H01L45/00; H01L49/00
Domestic Patent References:
WO2010147073A12010-12-23
Foreign References:
JP2011101030A2011-05-19
JP2000340769A2000-12-08
Attorney, Agent or Firm:
KOSHIBA, Masaaki (Koshiba Patent Office, 13-8 Hyakurakuen 3-chome, Nara-sh, Nara 24, 〒6310024, JP)
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Claims: