Title:
RESISTIVE MEMORY ELEMENT AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2010/095295
Kind Code:
A1
Abstract:
Disclosed is a resistive memory element which has a high resistance change rate and an excellent memory effect.
Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrodes (3, 4) which face each other via at least a part of the element body (2). The element body (2) is formed from a polycrystalline oxide semiconductor that has a composition represented by the following general formula: Ti1-xMxO2 (wherein M represents at least one of Fe, Co, Ni and Cu, and x satisfies 0.005 ≤ x ≤ 0.05). The first electrode (3) is formed from a material which is capable of forming a Schottky barrier that can exhibit rectifying properties and resistance change characteristics at the interface region with the element body (2). The second electrode (4) is formed from a material which is capable of obtaining a more ohmic junction with the element body (2) when compared with the first electrode (3).
Inventors:
HIROSE SAKYO (JP)
Application Number:
PCT/JP2009/065633
Publication Date:
August 26, 2010
Filing Date:
September 08, 2009
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
HIROSE SAKYO (JP)
HIROSE SAKYO (JP)
International Classes:
H01L27/10; H01L45/00; H01L49/00
Foreign References:
| JP2008310859A | 2008-12-25 | |||
| JP2007235139A | 2007-09-13 | |||
| JPH10135715A | 1998-05-22 |
Attorney, Agent or Firm:
KOSHIBA, MASAAKI (JP)
Masaaki Koshiba (JP)
Masaaki Koshiba (JP)
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