Title:
RESISTIVE SWITCHING ELEMENT AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2014/020478
Kind Code:
A3
Abstract:
A bipolar resistive switching device comprises a bottom electrode, a stack of at least two transition metal oxides layers, the stack including at least one oxygen gettering layer, and a top electrode. A particular configuration is Pt/TaOx/CrOy/Cr/Cu. Methods for manufacturing and use of the bipolar resistive switching device are disclosed as well.
Inventors:
SACCHETTO DAVIDE (CH)
BOBBA SHASHI KANTH (CH)
GAILLARDON PIERRE-EMMANUEL JULIEN MARC (CH)
LEBLEBICI YUSUF (CH)
DE MICHELI GIOVANNI (CH)
DEMIRCI TUGBA (CH)
BOBBA SHASHI KANTH (CH)
GAILLARDON PIERRE-EMMANUEL JULIEN MARC (CH)
LEBLEBICI YUSUF (CH)
DE MICHELI GIOVANNI (CH)
DEMIRCI TUGBA (CH)
Application Number:
PCT/IB2013/055941
Publication Date:
May 15, 2014
Filing Date:
July 19, 2013
Export Citation:
Assignee:
ECOLE POLYTECH (CH)
International Classes:
H01L45/00; G11C13/00; H03K19/173
Foreign References:
| US20120091427A1 | 2012-04-19 | |||
| US20100258782A1 | 2010-10-14 | |||
| US20090039332A1 | 2009-02-12 |
Other References:
LEE H Y ET AL: "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM", IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 15-17 DECEMBER 2008, SAN FRANCISCO, CA, USA, 2008, pages 1 - 4, XP031434433, ISBN: 978-1-4244-2377-4
LEE J ET AL: "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications", IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 6-8 DECEMBER 2010, SAN FRANCISCO, CA, USA, 2010, pages 19.5.1 - 19.5.4, XP055018572, ISBN: 978-1-44-247418-5
LIU T ET AL: "Novel highly nonlinear memristive circuit elements for neural networks", INTERNATIONAL JOINT CONFERENCE ON NEURAL NETWORKS, 10-15 JUNE 2012, BRISBANE, AUSTRALIA, 2012, pages 1 - 8, XP032210155, ISBN: 978-1-4673-1488-6
LEE J ET AL: "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications", IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 6-8 DECEMBER 2010, SAN FRANCISCO, CA, USA, 2010, pages 19.5.1 - 19.5.4, XP055018572, ISBN: 978-1-44-247418-5
LIU T ET AL: "Novel highly nonlinear memristive circuit elements for neural networks", INTERNATIONAL JOINT CONFERENCE ON NEURAL NETWORKS, 10-15 JUNE 2012, BRISBANE, AUSTRALIA, 2012, pages 1 - 8, XP032210155, ISBN: 978-1-4673-1488-6
Attorney, Agent or Firm:
WEIHS, Bruno (P.O. Box 5107, Lausanne, CH)
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