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Title:
RESISTIVE SWITCHING MEMORY CELL
Document Type and Number:
WIPO Patent Application WO/2022/105606
Kind Code:
A1
Abstract:
A resistive random access memory (ReRAM) device is provided. The ReRAM device (100) includes a stack structure including a first electrode (126), a metal oxide layer (128) in contact with the first electrode (126), and a second electrode (130) in contact with the metal oxide layer (128). A portion of the stack structure is modified by ion implantation (140), and the modified portion of the stack structure is offset from edges of the stack structure.

Inventors:
ADUSUMILLI PRANEET (US)
ANDO TAKASHI (US)
VEGA REINALDO (US)
CHI CHENG (US)
Application Number:
PCT/CN2021/128430
Publication Date:
May 27, 2022
Filing Date:
November 03, 2021
Export Citation:
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Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
International Classes:
H01L45/00; H01L27/24
Foreign References:
CN106229407A2016-12-14
CN102254803A2011-11-23
US20120295398A12012-11-22
US20150349250A12015-12-03
US20180012657A12018-01-11
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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