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Title:
RESISTOR-CAPACITOR REINFORCEMENT-BASED MEMORY CELL OF STATIC RANDOM ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2016/154824
Kind Code:
A1
Abstract:
Proposed is a resistor-capacitor reinforcement-based memory cell of a static random access memory, comprising a latch circuit and a bit selection circuit. The latch circuit is composed of two PMOS transistors P1 and P2, two NMOS transistors N1 and N2, a first resistor-capacitor network and a second resistor-capacitor network. The bit selection circuit is composed of NMOS transistors N5 and N6. The latch circuit forms four storage points X1, X1B, X2 and X2B, and a coupling capacitor C is disposed between one complementary pair of data storage points. Compared with a traditional 6T structure memory cell, the memory cell is additionally provided with resistor-capacitor networks and a coupling capacitor. The memory cell is prevented from single event upsets at the cost of a little increment in area while not changing an original read operation path or obviously increasing the complexity, thereby ensuring the correctness of data.

Inventors:
WANG JINGQIU (CN)
CHEN LIANG (CN)
LIU LI (CN)
Application Number:
PCT/CN2015/075319
Publication Date:
October 06, 2016
Filing Date:
March 27, 2015
Export Citation:
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Assignee:
INST AUTOMATION CAS (CN)
International Classes:
G11C11/413
Domestic Patent References:
WO2008118553A22008-10-02
WO2000074064A12000-12-07
Foreign References:
CN104157303A2014-11-19
CN104157304A2014-11-19
CN104318953A2015-01-28
CN104464796A2015-03-25
Attorney, Agent or Firm:
BEIJING BOWEI INTELLECTUAL PROPERTY LAW CORPORATION (CN)
北京博维知识产权代理事务所(特殊普通合伙) (CN)
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