Title:
RESONANT TUNNELING DIODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/183475
Kind Code:
A1
Abstract:
The present application provides a resonant tunneling diode and a manufacturing method therefor. The resonant tunneling diode comprises: a first potential barrier layer, a second potential barrier layer, and a potential well layer located between the first potential barrier layer and the second potential barrier layer. The materials of the first potential barrier layer, the second potential barrier layer, and the potential well layer are group III nitrides, and the material of the potential well layer comprises a Ga element. A first isolation layer is provided between the first potential barrier layer and the potential well layer, and/or a second isolation layer is provided between the second potential barrier layer and the potential well layer. The first isolation layer and the second isolation layer are utilized to block Ga atoms in the potential well layer from diffusing to the first potential barrier layer and the second potential barrier layer, so that the components of the first potential barrier layer and the second potential barrier layer are ensured to be uniform, and the effective thickness is prevented from being thinned, thereby improving the device stability and a peak-to-valley current ratio.
Inventors:
CHENG KAI (CN)
LIU KAI (CN)
LIU KAI (CN)
Application Number:
PCT/CN2021/079266
Publication Date:
September 09, 2022
Filing Date:
March 05, 2021
Export Citation:
Assignee:
ENKRIS SEMICONDUCTOR INC (CN)
International Classes:
H01L29/88; H01L21/329
Foreign References:
| CN106876442A | 2017-06-20 | |||
| CN111668351A | 2020-09-15 | |||
| CN108183136A | 2018-06-19 | |||
| EP0697741A1 | 1996-02-21 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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