Title:
RESONATOR AND METHOD FOR MAKING SAME
Document Type and Number:
WIPO Patent Application WO/2022/000809
Kind Code:
A1
Abstract:
Provided in the present disclosure is a resonator structure, comprising a substrate, a bottom electrode formed on the substrate, a piezoelectric layer formed on the bottom electrode and a top electrode formed on the piezoelectric layer. The overlapping area of the top electrode, the piezoelectric layer and the bottom electrode is a resonating area. The resonator also comprises space formed in the resonating area. The surface of the bottom electrode away from the substrate is a first surface, and the surface of the top electrode facing the piezoelectric layer is a second surface. The space extends from the first surface towards a direction away from the piezoelectric layer and/or extends from the second surface towards a direction away from the piezoelectric layer. Alternatively, the piezoelectric layer comprises a bottom surface facing the bottom electrode and a top surface arranged opposite to the bottom surface and facing the top surface of the top electrode, and the space extends from the bottom surface towards the top surface or extends from the top surface towards the bottom surface. Also provided in the present disclosure is a method for making the resonator. Compared to the related art, the resonator structure in the present disclosure can reduce the energy loss of a device, increase the Q value, and reduce insertion loss.
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Inventors:
WU KE (CN)
DOU SHAOXU (CN)
HAN QI (CN)
ZHANG LIRONG (CN)
ZHUANG YUZHAO (CN)
YANG SHUAI (CN)
LOO LI ENG (SG)
WANG CHAO (CN)
DOU SHAOXU (CN)
HAN QI (CN)
ZHANG LIRONG (CN)
ZHUANG YUZHAO (CN)
YANG SHUAI (CN)
LOO LI ENG (SG)
WANG CHAO (CN)
Application Number:
PCT/CN2020/116276
Publication Date:
January 06, 2022
Filing Date:
September 18, 2020
Export Citation:
Assignee:
AAC ACOUSTIC TECH SHENZHEN CO LTD (CN)
International Classes:
H03H9/02; H03H9/17
Foreign References:
| CN101645699A | 2010-02-10 | |||
| US20160308509A1 | 2016-10-20 | |||
| US20150349747A1 | 2015-12-03 | |||
| US20180085787A1 | 2018-03-29 | |||
| US20140176261A1 | 2014-06-26 |
Attorney, Agent or Firm:
SHENZHEN JUNXINCHENG INTELLECTUAL PROPERTY FIRM (GENERAL PARTNERSHIP) (CN)
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