Title:
RESONATOR AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/155192
Kind Code:
A1
Abstract:
A resonator and a semiconductor device. The resonator comprises: a substrate (100); and a multilayer structure (200) formed on the substrate (100), the multilayer structure (200) comprising a lower electrode layer (203), a piezoelectric layer (202) and an upper electrode layer (201) sequentially from bottom to top. A cavity (300) is formed between the substrate (100) and the multilayer structure (200), the cavity (300) is enclosed by an upper side surface of the substrate (100) and a lower side surface of the multilayer structure (200), a middle region (2031) of the lower side surface of the multilayer structure (200) corresponding to the cavity (300) is a flat surface, there are smooth curved surfaces (2032) smoothly transitioning between edges of the middle region (2031) and edges of the cavity (300), and the smooth curved surfaces (2032) are located between the upper side surface of the substrate (100) and the flat surface. Said resonator is provided with the cavity (300) of which the top wall is a flat surface, thereby forming a novel resonator structure and having good performance.
Inventors:
LI LIANG (CN)
LV XIN (CN)
LIANG DONGSHENG (CN)
LV XIN (CN)
LIANG DONGSHENG (CN)
Application Number:
PCT/CN2019/074933
Publication Date:
August 06, 2020
Filing Date:
February 13, 2019
Export Citation:
Assignee:
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION (CN)
International Classes:
H03H3/02
Foreign References:
| CN101465628A | 2009-06-24 | |||
| CN209088901U | 2019-07-09 | |||
| CN104868871A | 2015-08-26 | |||
| CN208079029U | 2018-11-09 | |||
| JP2008205872A | 2008-09-04 |
Attorney, Agent or Firm:
SHIJIAZHUANG GOWELL INTELLECTUAL PROPERTY LAW FIRM (CN)
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