Title:
REVERSE CONDUCTING INSULATED-GATE BIPOLAR TRANSISTOR, AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/052099
Kind Code:
A1
Abstract:
Provided is a reverse conducting insulated-gate bipolar transistor (RC-IGBT) provided with a transistor section and a diode section. The RC-IGBT provided with the transistor section and the diode section is provided with: a semiconductor substrate; a first conductivity type drift region provided to the upper surface side of the semiconductor substrate; a second conductivity type base region provided above the drift region; a first conductivity type source region provided above the base region; and two or more trench portions which are provided so as to pass through the source region and the base region from the upper end side of the source region. The diode section is provided with: the source region; a contact trench provided to the upper surface side of the semiconductor substrate, and between two adjacent trench portions among the two or more trench portions; and a second conductivity type contact layer which is provided below the contact trench, and which has a higher concentration than the base region.
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Inventors:
NAITO TATSUYA (JP)
Application Number:
PCT/JP2017/033363
Publication Date:
March 22, 2018
Filing Date:
September 14, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/739; H01L21/265; H01L21/266; H01L21/336; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2014041808A1 | 2014-03-20 | |||
| WO2010125819A1 | 2010-11-04 | |||
| WO2012124784A1 | 2012-09-20 |
Foreign References:
| JP2010147381A | 2010-07-01 | |||
| JP2010147380A | 2010-07-01 | |||
| JP2007311627A | 2007-11-29 | |||
| JP2016146470A | 2016-08-12 | |||
| JP2016154218A | 2016-08-25 | |||
| JP2016012581A | 2016-01-21 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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