Title:
SEMICONDUCTOR/INSULATOR REVERSIBLE-CHANGE THIN FILM AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2017/150617
Kind Code:
A1
Abstract:
Provided is a thin film in which the semiconductor characteristics of an In-Ga-Zn-O-based oxide are reversible, and a method of manufacturing the same. A semiconductor/insulator reversible-change thin film comprising an In-Ga-Zn-O-based oxide is characterized by being an amorphous thin film in which the elemental ratio of In, Ga, and Zn is such that [In] > [Zn] > [Ga], which changes from a n-type semiconductor to an insulator as a result of irradiation with light of a wavelength shorter than visible light, and returns to an n-type semiconductor as a result of heating to at least room temperature. The method for manufacturing the same is a method for manufacturing a semiconductor/insulator reversible-change thin film comprising an In-Ga-Zn-O-based oxide, characterized in that the thin film is obtained by adding In, Ga, and Zn metal salts to a solvent, applying this to a substrate, and heat treating.
Inventors:
FUKUDA NOBUKO (JP)
CHENG DONG JING (JP)
MORIMOTO TAKAAKI (JP)
CHENG DONG JING (JP)
MORIMOTO TAKAAKI (JP)
Application Number:
PCT/JP2017/008122
Publication Date:
September 08, 2017
Filing Date:
March 01, 2017
Export Citation:
Assignee:
NAT INST ADVANCED IND SCIENCE & TECH (JP)
International Classes:
H01L21/8239; H01L21/336; H01L21/368; H01L27/105; H01L29/786; H01L45/00; H01L49/00
Foreign References:
| JP2013254121A | 2013-12-19 | |||
| JP2007073699A | 2007-03-22 | |||
| JP2009182194A | 2009-08-13 |
Other References:
YUSUKE OCHIAI ET AL: ""Yoekiho de Sakusei shita IGZO Hakumaku no UV Shosha ni yoru Fukasseika to Netsu ni yoru Kaifuku", THE 63RD JSAP SPRING MEETING KOEN YOKOSHU, 3 March 2016 (2016-03-03), pages 15-085
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