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Patent Searching and Data


Title:
REWRITE METHOD FOR RESISTANCE CHANGE ELEMENT, AND NON-VOLATILE STORAGE DEVICE USING RESISTANCE CHANGE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/082860
Kind Code:
A1
Abstract:
Provided are a rewrite method for a resistance change element that increases a rewrite count, and a non-volatile storage device using the resistance change element. In the rewrite method for the resistance change element, a resistance change layer is disposed between a first electrode and a second electrode, and a write voltage is applied between the first electrode and the second electrode, thereby causing the resistance between the first electrode and the second electrode to reversibly change. After writing to the resistance change element, the resistance change element is read, the read current is measured, the measured read current is compared with a reference current, a condition of the writing is changed on the basis of the comparison results, and thereafter writing to the resistance change element is performed again.

Inventors:
SAKAMOTO Toshitsugu (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
BANNO Naoki (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
TADA Munehiro (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
TSUJI Yukihide (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
Application Number:
JP2018/039252
Publication Date:
May 02, 2019
Filing Date:
October 23, 2018
Export Citation:
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Assignee:
NEC CORPORATION (7-1 Shiba 5-chome, Minato-ku Tokyo, 01, 〒1088001, JP)
International Classes:
G11C13/00
Attorney, Agent or Firm:
SHIMOSAKA Naoki (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
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