REWRITE METHOD FOR RESISTANCE CHANGE ELEMENT, AND NON-VOLATILE STORAGE DEVICE USING RESISTANCE CHANGE ELEMENT

WIPO Patent Application WO/2019/082860

A1

Provided are a rewrite method for a resistance change element that increases a rewrite count, and a non-volatile storage device using the resistance change element. In the rewrite method for the resistance change element, a resistance change layer is disposed between a first electrode and a second electrode, and a write voltage is applied between the first electrode and the second electrode, thereby causing the resistance between the first electrode and the second electrode to reversibly change. After writing to the resistance change element, the resistance change element is read, the read current is measured, the measured read current is compared with a reference current, a condition of the writing is changed on the basis of the comparison results, and thereafter writing to the resistance change element is performed again.

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JP2648151	[Title of Invention] Memory element

SAKAMOTO TOSHITSUGU (JP)
BANNO NAOKI (JP)
TADA MUNEHIRO (JP)
TSUJI YUKIHIDE (JP)

PCT/JP2018/039252

May 02, 2019

October 23, 2018

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NEC CORP (JP)

G11C13/00

JP2016024841A	2016-02-08
JP2007004935A	2007-01-11

SHIMOSAKA Naoki (JP)

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