RF CIRCUITS INCLUDING TRANSISTORS HAVING STRAINED MATERIAL LAYERS

Title:

RF CIRCUITS INCLUDING TRANSISTORS HAVING STRAINED MATERIAL LAYERS

Document Type and Number:

WIPO Patent Application WO2003028106

Kind Code:

B1

Abstract:

Circuits for processing radio frequency ("RF") and microwave signals are fabricated using field effect transistors ("FETs") that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators ("VCOs"), low noise amplifiers ("LNAs"), and phase locked loops ("PLLs") built using these FETs also exhibit enhanced performance.

Inventors:

BRAITHWAITE GLYN
HAMMOND RICHARD
CURRIE MATTHEW

Application Number:

PCT/US2002/030226

Publication Date:

January 15, 2004

Filing Date:

September 24, 2002

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Assignee:

AMBERWAVE SYSTEMS CORP (US)

International Classes:

H01L27/06; H01L27/092; H01L29/10; H01L29/51; H03B5/12; H03K3/354; H03L7/093; H03L7/099; H01L29/786; (IPC1-7): H01L27/088; H01L21/8238; H01L21/8234; H01L29/10

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