RINSE LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN USING SAME

WIPO Patent Application WO/2004/051379

A1

A rinse liquid for lithography enables highly reproducible formation of especially a resist pattern with a high aspect ratio by preventing separation or collapse of the resist pattern. A method for forming a pattern using such a rinse liquid is also disclosed. The rinse liquid for lithography contains water and a nonionic surfactant having an ethyleneoxy group and not having a fluorine atom. The method for forming a resist pattern comprises a step in which a developed resist pattern is rinsed using the rinse liquid for lithography.

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KOBAYASHI MASAKAZU (JP)
ICHIKAWA HIROYUKI (JP)
YAMADA YOSHIAKI (JP)
TANAKA KEIICHI (JP)

PCT/JP2003/015150

June 17, 2004

November 27, 2003

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CLARIANT INT LTD (CH)
KOBAYASHI MASAKAZU (JP)
ICHIKAWA HIROYUKI (JP)
YAMADA YOSHIAKI (JP)
TANAKA KEIICHI (JP)

G03F7/32; C11D1/72; C11D11/00; H01L21/027; (IPC1-7): G03F7/32; H01L21/027; H01L21/304

WO1999015609A1

1999-04-01

JP2000338685A	2000-12-08
US5002857A	1991-03-26
JPH11184099A	1999-07-09

See also references of EP 1580606A4

Kanao, Hiroki (Bandai Bldg.2nd Floor 10-14, Kandaawajicho 2-chom, Chiyoda-ku Tokyo, JP)

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