Title:
RUTHENIUM-ALLOY SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2006/134743
Kind Code:
A1
Abstract:
A ruthenium-alloy sputtering target which is a ruthenium-alloy sinter target obtained by sintering a powder mixture of a ruthenium powder and a powder of a metal having higher oxidizing ability than ruthenium. It is characterized in that the target excluding all gaseous ingredients has a purity of 99.95 wt.% or higher, the metal more apt to form an oxide than ruthenium is contained in an amount of 5-60 at.%, the relative density is 99% or higher, and the content of oxygen as an impurity is 1,000 ppm or lower. Because of the reduced oxygen content in the ruthenium-ally sputtering target, arcing or particle generation during sputtering is inhibited. Due to the improved sinter density, the target has heightened strength. In order to prevent compositional fluctuations concerning the boron and phosphorus added in a slight amount to a silicon semiconductor, the amounts of boron and phosphorus impurities in the target are strictly restricted. Thus, the ruthenium-alloy sputtering target can give a deposit having improved quality.
Inventors:
ODA KUNIHIRO (JP)
Application Number:
PCT/JP2006/309698
Publication Date:
December 21, 2006
Filing Date:
May 16, 2006
Export Citation:
Assignee:
NIPPON MINING CO (JP)
ODA KUNIHIRO (JP)
ODA KUNIHIRO (JP)
International Classes:
C23C14/34; B22F3/00; H01L21/285
Domestic Patent References:
| WO2004001092A1 | 2003-12-31 |
Foreign References:
| JP2003064473A | 2003-03-05 | |||
| JP2000017433A | 2000-01-18 | |||
| JP2000345327A | 2000-12-12 | |||
| JP2004319410A | 2004-11-11 | |||
| JPH1150163A | 1999-02-23 | |||
| JP2004319410A | 2004-11-11 | |||
| JP2002167668A | 2002-06-11 |
Other References:
See also references of EP 1892315A4
Attorney, Agent or Firm:
Ogoshi, Isamu (Daini-Toranomon Denki Bldg. 5F, 3-1-10 Toranomo, Minato-ku Tokyo 01, JP)
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