Title:
SPUTTERING TARGET, PROCESS FOR PRODUCING THE SPUTTERING TARGET, AND PROCESS FOR PRODUCING Cu OXIDE LAYER
Document Type and Number:
WIPO Patent Application WO/2010/001823
Kind Code:
A1
Abstract:
Disclosed is a sputtering target that can form a Cu oxide layer evenly on a substrate. The sputtering target comprises Cu, oxygen, and unavoidable impurities. The content of oxygen is 7.0 to 33.3 atom% when the total content of Cu and oxygen is presumed to be 100 atomic%. Also disclosed is a process for producing a sputtering target that obtains a Cu sintered compact as a sputtering target material by heat treating a Cu powder in an oxygen-containing atmosphere to introduce oxygen, then performing pressure sintering to brining an oxygen content of 7.0 to 33.3 atom% when the total content of Cu and oxygen is presumed to be 100 atomic%.
Inventors:
YAKABE HIDETAKA (JP)
IWASAKI KATSUNORI (JP)
MURATA HIDEO (JP)
ISHIKAWA TAKUYA (JP)
SAITOH KAZUYA (JP)
IWASAKI KATSUNORI (JP)
MURATA HIDEO (JP)
ISHIKAWA TAKUYA (JP)
SAITOH KAZUYA (JP)
Application Number:
PCT/JP2009/061690
Publication Date:
January 07, 2010
Filing Date:
June 26, 2009
Export Citation:
Assignee:
HITACHI METALS LTD (JP)
YAKABE HIDETAKA (JP)
IWASAKI KATSUNORI (JP)
MURATA HIDEO (JP)
ISHIKAWA TAKUYA (JP)
SAITOH KAZUYA (JP)
YAKABE HIDETAKA (JP)
IWASAKI KATSUNORI (JP)
MURATA HIDEO (JP)
ISHIKAWA TAKUYA (JP)
SAITOH KAZUYA (JP)
International Classes:
C23C14/34; B22F1/00; C22C9/00; H01L21/28; H01L21/285
Domestic Patent References:
| WO2002039508A1 | 2002-05-16 |
Foreign References:
| JP2006124753A | 2006-05-18 | |||
| JPH01240649A | 1989-09-26 | |||
| JPS6464338A | 1989-03-10 | |||
| JP2004307247A | 2004-11-04 |
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