SPUTTERRING TARGET COMPRISING Al-Te-Cu-Zr-BASED ALLOY AND METHOD OF MANUFACTURING SAME

Title:

SPUTTERRING TARGET COMPRISING Al-Te-Cu-Zr-BASED ALLOY AND METHOD OF MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2016/056612

Kind Code:

A1

Abstract:

Provided is a sputtering target characterized by containing 20-40 at% of Te, 5-20 at% of Cu, 5-15 at% of Zr, and the remainder comprising Al, and having a sputtering target structure composed of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase, and a Zr phase. The purpose of the present invention is to provide: an Al-Te-Cu-Zr-based alloy sputtering target in which degradation in properties caused by deviations in composition is effectively suppressed; and a method of manufacturing the same.

Inventors:

KOIDO YOSHIMASA (JP)

Application Number:

PCT/JP2015/078564

Publication Date:

April 14, 2016

Filing Date:

October 08, 2015

Export Citation:

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Assignee:

JX NIPPON MINING & METALS CORP (JP)

International Classes:

C23C14/34; B22F3/10; B22F3/14; B22F5/00; C22C1/04; C22C28/00; C22C30/00; C22F1/00

Domestic Patent References:

WO2015146311A1

2015-10-01

Foreign References:

JP2014029026A	2014-02-13
JP2012142543A	2012-07-26
JP2011026679A	2011-02-10

Other References: