Title:
SURFACE PROCESSING METHOD FOR GaN SUBSTRATE AND MANUFACTURING METHOD FOR GaN SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/026948
Kind Code:
A1
Abstract:
Provided are: a surface processing method for a GaN substrate, which is capable of performing surface processing on the GaN substrate in a short period of time; and a manufacturing method for a GaN substrate. This surface processing method for a GaN substrate involves performing surface processing on the GaN substrate by grinding and polishing. The surface processing method comprises: a high-grit grinding step for grinding the surface of the GaN substrate with a grinding stone of at least #6000 grit; and a CMP polishing step for polishing the surface of the GaN substrate by means of CMP after grinding the surface of the GaN substrate through the high-grit grinding step.
Inventors:
OMIYA NATSUKO (JP)
AIDA HIDEO (JP)
KATAKURA HARUJI (JP)
AIDA HIDEO (JP)
KATAKURA HARUJI (JP)
Application Number:
PCT/JP2022/031193
Publication Date:
March 02, 2023
Filing Date:
August 18, 2022
Export Citation:
Assignee:
SANOH IND CO LTD (JP)
NATIONAL UNIV CORPORATION NAGAOKA UNIV OF TECHNOLOGY (JP)
NATIONAL UNIV CORPORATION NAGAOKA UNIV OF TECHNOLOGY (JP)
International Classes:
B24B7/00; B24B1/00; B24B37/00; B24B37/10; B24D3/14; H01L21/304
Foreign References:
| JP2008010835A | 2008-01-17 |
Attorney, Agent or Firm:
KENMOTSU Hidetaka (JP)
Download PDF: