Title:
SAMPLE MEASUREMENT DEVICE, SAMPLE MEASUREMENT METHOD, SEMICONDUCTOR DEVICE EVALUATION METHOD, AND COMPUTER PROGRAM
Document Type and Number:
WIPO Patent Application WO/2014/155557
Kind Code:
A1
Abstract:
This sample measurement device is provided with: an irradiation source for irradiation with an electron beam; a scanning system for scanning a measurement area with the electron beam; a memory for storing simulation-calculated intensity information of an electron beam diffraction image of a sample having different thicknesses; a zero-order diffraction intensity acquisition unit for placing the sample in the measurement area and scanning the sample with the electron beam to acquire the intensities of the zero-order diffraction pattern of a transmission electron beam image in the measurement area; an intensity ratio calculation unit which acquires reference intensities of the electron beam when this is scanned in a state in which there is no sample in the measurement area, and which calculates the ratios of the intensities of the aforementioned zero-order diffraction pattern to the reference intensities; and a thickness determination unit for comparing the intensity ratios with the aforementioned intensity information acquired by simulation to determine the thicknesses of the sample to be measured.
Inventors:
KOTAKA YASUTOSHI (JP)
Application Number:
PCT/JP2013/058961
Publication Date:
October 02, 2014
Filing Date:
March 27, 2013
Export Citation:
Assignee:
FUJITSU LTD (JP)
International Classes:
G01B15/02; G01N23/04; G01N23/20
Foreign References:
| JP2012507728A | 2012-03-29 | |||
| JP2004286639A | 2004-10-14 | |||
| JP2012132688A | 2012-07-12 | |||
| JP2006242914A | 2006-09-14 | |||
| JP2003249186A | 2003-09-05 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Tadashige Ito (JP)
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