DESIGN

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application C&hns prioritytothe provisional patent application fiied October 2d, 20l8 and assiguedU-S. App. No. 62/751, 472, the disclosure of which is hereby incorporatedby reference.

HELD OF THE DISCLOSURE

[0002] this disclosure relates to imaging systems for inspecting wafers.

BACKGROUND OF THE DISCLOSURE

[0003] Evolution of the semiconductor manuiactmng industry replacing greater demands on yield managemeht and, inparticular., on metrOlogy and inspection systems. Critical dimensions continue to shrink, yet tbe industry needs to decrease time for achieving bigh-yield, high-value production. Minimizing the total time from detecting » yieidproblem to fixing it determines the retum-on-investment for a semiconductor mannfeciuftT. [0004] FabricatingsemicotKluctordeviees, such as logk and nKmoly devices, typically includes processing a semiconductor Wafer using a large number of febrication processes to form various feature and multiple levels of the semiconductor devices. Forexample, lithography is a semiconductor fiSmcation process that involves transferring ;:r pattem firom a reticle to a photoresist arranged on a semiconductor wafer. Additional examples of seniiconductor &brication processes include, but are not limited to, chemical-mechanical poI½hmg (CMP), etch, deposition and km implantation. Multiple sembonductor devices may be fabricated in an arrangement on a single semiconductor waferthat are separated into individual semiconductor devices.

[0005] Inspection processes are used at various steps during semiconductor mamifecturing to detect defers on wafers to promote higher yield in the manufacturing process and, thus, higher profits. Inspection has always been an impoitant part of fabricating semiconductor devices such as integrated circuits . However, as the dimensions of semiconductor devices decrease, inspection becomes even more important to the successful manufacture of acceptable semiconductor devices because smaller defects can cause the devices to foil Foir instance, as fee dimensions Of

semiconductor devices decr ease, detection of defects of decreasing size has become necessary because evenrelatively small defects may cause unwanted aberrations in the semiconductor devices.

[0006] As design mtes shrink, howe ver, senuconductor manufecturing processes may be operating closer to fee hmitation on the performance capabilityoftheprocesses. In addition, smaller defects can have an impact on the electrical parameters of the device as the design idles shrink, which drives more sensitive inspections. As des¾n mles s$innk,W poputatk>n df potentially yield-relevant defects detected by inspection grows dramatically, and the population of nuisance de&cts detected jfy inspection also increases dramatically. Therefore, more defects may be detected on the wafers, and correcting the processes to eliminate all of the defects may be difficult and expensive Determining Much ofthedefects actually have an effect on the electrical parameters of the devices and fee yfeld may allow process controlmethods to be focused oil those defects while largely ignoring others. Furthermore, at smaller design rules, process- induced failures, in some cases, tend to be systematic. That is, process-indued failures tend to fell at predetermined design patterns often repeated many times within the design. Eliminationof spafially-systematic, electrically-relevant defects can have an impact on yield

[0002] As tolerances on semiconductor device fabrication processes continue to narrow, fee demand fin improved semiconductor wafer inspection took continues to increase Types of inspection took suitable ibr wafer inspection include a dark field (DE) inspection tool, which utilizes scattering infonnation from a sample (e.g. , semiconductor wafer), and a differeutial interference contrast 05IC) inspection tool, tvhich utilizes phase information from a Sample.

Typically, when seeking both DF and DlC information, a given inspection foot or microscope operates independently in either DE mode or Did mode due to differences and/or incompatibilities in optical components, optical layout, andthedetection signal Although it k possible to rip different optical layouts separately to detect DF and DlC signals separately, it is time-consuming, and sometimes impossible, to combine two separated signals during the observation of a moving supple (e _÷ g„ bfological livtng ceB), lathe semiconductor fifericatfon industry it is important for inspection equipment to be capable of quickly beating and classifying one or more defects. As a result, performing DF and DIC inspection in separate operations reduces value to the wafer inspection process;

[6008] As sensitivityand throughput requirements increase for 9 defect inspection system,

DIG performance approaches its limit with the existing architecture. Did can have poor spatial resolution, consequently resulting in fow defect detection sensitivity for a defect infection system. To increase spatial resohitton, Hght spot size on inspection surfece must ¼ reduced, leadmg to k)W inspection throughput.

[6609] Therefore, improved inspection systems and inspection methods are needed.

BRIEF SUMMARY OF THE DISCLOSURE [6610] An apparatus is pro vided in a first embodiment The apparatus includes at least one illumination source; a stage configured to secure a wafer; a TDIrCCD sensor, a dark field/bright field sensor; a field Stop in a light path from the illmnination source; a polarizer in the hghtpath; a Wollaston prism in the light path; a correcti-onlens optic in the light path; a mirror in the light path that receives the P polarized light and the S pofeifoed light from the Wollaston prism; and an Objective lens assembly in the light path. The polarizer is configured to pass P polarized light and reflect S polarized light. The WoBastonprism fonm the P polarized light and the S polarized light. The correction lees optic, the mirior, and the objective lens assembly ate configured to focus the P polarized tight and the S polarized light onto the stage, wherein die P polarized light and the S polarized fight are separated in a shear direction ofthe Wollaston prism, and wherein the Ppolarized light and the S polarized combine at fire WoBastonprism.

[0011] The polarizer can be ^ polariz ing beam splitter cube.

[6612] The field stop can be a controlled variable field stop , A tangential width of the field stop can be configured to vary With scamiing radms whereby the tangentialwidth at an end of the field stop is target than at an opposite end ofthe field stop. [6612] t¼ apparatus can fiuther include a half wave plate rathe light path that rotates the P polarized fight by 45 degrees. [9014] The Wollaston prism canbe oriented with a principle axis at 0 degrees.

[0015] The mirror may be a fold Wot

[0016] The il ¾ source may be a broadband light emitting diode.

[0017] The apparatus can fiifther ipChide a dichroie mjiXQr hi foe ligln patb betweeathe objective lens assembly and the mirror. Tfae dichroic mirror can direct foe $ polarized fight at the dark field/ bright field sensor.

[9018] The app aratus Wfoither ifrcfode a collimating optics assembly in the fight pajfo between the field stop and the polarizer.

[0015] The apparatus can be configured to provide a diiferential interference contract mode. [0020] A method is provided in a second embodiment. The method includes generating a fight beam nspg an flfommation source. The fight heap is directed £N>xs| the illumination source through a field stop. The fight beam is directedfrom the field stop through a polarizer. The ligfat beam is directed from toe polarizer to a Wollaston prism. The fight beam is directed from the Wollaston prism to a correction tens optic. The fight beam is directed from the correction less optic to a mirror. The hght beam is directed toward a wafer on a stagethrough an objective lens astotobty. The correction tens optic, the mirror., and the Objective tens assembly are Configutod to focus P polarized light and S polarized fight from toe Wollaston prism onto toe stage. The P polarized light and the S polarized fight are separated in a shear direction of toe Wollaston prism. The fight beam reflected from foe wafer oh the sfege is split witfi a dichroie minor into a. first fight beam and a second light beam. The first light beam « received with a daitefield/hright field sensor.

The P polarized tight and the S polarized fight of foe second light beam are combined at the Woilasion prism The second light beam from the Wollaston prism is received w¾a TPI-CCD sensor.

[9921] The polarizer can be a polarizing beam sptitter chbe in foe fight path. The polarizing beam splitter can be configured to pass P polarized light and reflect S polarized light [0022] The method can further include directing the light beam through ahalf wave plate that rotates the P polarized Iight by 45 degrees. The halfwaveplate can be disposed between the polarizer andtheWollasronprism

[0023] The field Stop can be a contrOBed variable field stop, A tangential width Of die field stop canbe configured to vary Withscanmng radiuswhereby the tangential width at an end of the field stop is larger than at an oppose end of the field step,

[0024] The Wollaston prism can be Priented with aprinciple axis at 0 degrees.

[0025] The mirror may be a fold mirror

[0026] The ilhtminatipn source may be a broadband light emitting diode. [0027] The method can be configured to provide a differential interference contrast mode

[0028] The method can firrther inciude cdllimatmg the hght beam directed by the field stbp using a collimating opticsassembly.

DESCRIPTION OF THE DRAWINGS

[0020] For a fiiBer understanding of the mtiise and objects of the disclosure, reference should be made to the following detailed description taken in conjunction with the accompanying draWingS, in which;

FIG 1 is a blockdiagram ofan embodiment of an inspection system in accordance with the present disclosure;

FIG. 2 illustrates a comparison between illumination whh a broadband light enutting dk>de (LED) and ilhiinination with a laser;

FIG.3 and FIG. T illustrate, in accordance with an embodiment ofthepresent disclosure, optical field of view m boxes that cover the entire TDI-CCD sensor and a CCD sensor that is time-delay- integration muature;

HG: 5 illustrates image binning control in accordance with the present disclosure;

FIG- 6 is ablockdiagramofanembodiment ofa variable field stop in accordance with the present disclosure; FIG.7 illustrates the variable field stop _. of HO, 6;

FIG.8 is a block diagram of an embodiment ofpolarizing optics in accordance With the present disclosure; and

FIG. 9 is a flowchart of a method in accordance with the present disclosure. DETAILED DESCRIPTION OF THE DISCLOSURE

[0030] Although claimed subject matter will lie described to terms of certain embodiments, other embodiments, including embodiments that do not provide all of the benefits and features set forth herein, are also within the scope of this disclosure, Varipus structural, logical, process step, and electronic changes may be made without departing from the scope of the disclosure

Accordingly, the scope of the disclosure is defined only by reference to the appended claims.

[0031] The embodiments disclosed herein can provide high spatial rerofefion, high defect detection sensitivity and signal-to-noise ratio (SNR), and fast inspectionspee& The design can be referred to as an imaging phase-contrast channel (PCC). The PCX! design of¾s, addkionaliy, low image blurring while maintaining relatively tow lightbudgetand good field retardation uniformity.

[0032] The embodiments disclosed herein include a DIG design by optical imaging on a dual inspector system. The imaging DIG can Use a TDI (time-delay-integration) charge-coupled device (CCD) sensor for a scantier system. The DIG designalso can implement polarization optks and a variable field-stop for light-budget enhancement and image binning reduction in an R-q scanner system

[0033] tii the embodiments disclosed herein, fire TDI sensor can be a standalone scanning inspector application. For example, the TDI sensor can be used hi a standalone scanning injector application for wafer defect inspection, A broadband LED ilhunination . source or other illumination source can be used.

[0034] FIG; 1 is a block diagram of an embodiment of an inspection system 100. The inspection system 100 can fie a DIG architecture in an imaging optical design with a TDI-CCD sensor lire inspection areas are imaged onto the TDI sensor for both the DIG leading and trailing beams. The inspection system 100 can be a standalone scanning inspector system or Us a subsystem of a dual, multi-inspector system. The design of the inspection system 100 combines polarization properties and components, making it efficient in light budget sensitive applications. In an R-q based scanner system, because image blurring occurs when image field of view (EpV) gets closer tp carter of rotation, a variable field-stop can be used effectively to reduce F«V in association with scanning radius and, therefore, reduce imaging blurring.

[0035] Eor y typical dual inspector system, such as a dark-field inspector and a bright-fleld inspector, a phase contrast-based defect detection channel (i.e., PCC) by DIC principle can be used for the brigbt-field inspector. When tbe TDI-CCD sensor is used, tbe PCCean adapt animaging optical design and can use the general structure showu in FXG _> 1. [0036] The inspection system 100 includes at least one illnmination source 101 anda stage

102 configured to secure a wafer 103. The illuniination source 101 can be a broadband LED. The broadband LED can suppress background noise and provide impro ved signal-to-noise ratio.

However, a laser also can be used for the illumination source 101. For example, a laser with speckle-reduction optics and/or surface noise reduction optics can be used The inspection system 100 also can include bothu broadband LED and laser, other types offight sources, or other combinations of light sources.

[0037] The inspection system 100 also includes a TDI-CCD sensor 115 aid a dark field/bright field sensor 113. The dark fiekl/bright field sensor 113 can operate as a dark field sensorora teght fieidsensor. The dark fieM/bright field sensor ! 13 can be a PMT, photodiode or photodiode always, or a CCD imager ¼ non-DIC mode.

[0030] The TDLCCB sensor 115 car be used id scanning imagers to provide dynamic, fast.

Old high-quality image acquisitions. The CCD seiosor fised for fife DQil-CCD sdb@br 115 cad provide a time-delay-integrafion operation mode. The TDhCCD sensor 115 works with a moving image whereby fire pixels of the TDI-CCD sensor 115 are ahgned and synchronized witb the “pixels” of the moving image. While the image is nmying* the corresponding pixels On the TDI-

CCD sensor Ϊ 15 are clocked forward and, as such, Ught (photons) from the image pixels are continuously accumulated Onto the tbvit$ of pixels TDI-CCD sensor 115 until they are real ont at the end of the sensor. [0039] The TDI-CCD sensor 115 can be used for tnight field or dark field measurements.

An imager Or a spot scanner can be used. Inaninstance,a spot scanner can have an illumination spot of, for example, 4 pm (tangential) by 100 pmfradial) with an elliptical spot. This spot size cap set a lateral resolution of the system The collection optics 114 used with the spot scanner can include a photo to integrate light coming front the illumination spot 6a another instance, an imager canbe used. The imager can have better lateral resolution than the spot seamier. The imager can have hundreds Or oVet 4 thousand rows of line detectors comparedtothe single detector of the qfof scanner. The imager’s |pW Of line detectors oto provide a p&el size as small as; forexample, 0.65 pm [0040] A TDI-CCD sensor 115 has inatiy advantages. A TDI-CdD sensor 115 can be used m low light image acquisition applications and can increase the signal-to-noise ratio from a traditional CCD sensor without saerificmg image frame rate. Conversely, a TDI-CCD sensor 115 provides equivalent image clarity at a faster frame rate, making it useful for image scanner applications

[0041] The dark field/bright field sensor 113 can operate at a first wavelength.

[0042] A field stop 104 is positioned in a light path 116 from the Aiumination source iOL

The field stop 104 can be a controlled variable field slop. Thus, a tangential width of the field stop 104 can be configured to vary with spanning radius whereby the tangential width at amend of the field stop is larger than at an opposite end ofthe field stop.

[0043] The inspeetion system 100 also includes a polarizer 106 in the light path 116, In an instance, the polarizer 106 is a polarizing beam splitter cube. The polarizing beam splitter cube is configured tbpsiss P pp½iri¾ed light 119 rusdrefieCt ^" S polarized light 120. In another instance!, the polarizer 106 is a beam splitter with a polarizer and modules that allow P polarized light to transmit completely or partiaBy akmg the light path 116 arid S polarized light to be redacted completely or partially alpng ¾ light path to the TDI-CCD sensor 115 _>

[6644] A collimating optics assembly 105 « disposed between the field stop 104 and die polarizer 106 in the light path 1½. The collimating optics assembly 106 pan collimate die light from the field stop 104. [0045] A Wollaston prism 108 is disposed in the light paih ll6. The Wollaston prism 108 is a polarizing beam splitter Tfie Wollaston prism lOS separates light into two separateiinearly polarized outgoing beams withortjbogonal polarization (e g., P polarized light 119 and S polarized ¾¼ 120). Thus, incoming light inCludes P polarized light and S polarized light and is split into the P polarized light 119 and S polarized light 120. T¾e two linearly polarized light beams propagate away from each other at a small angle (e.g„ asp!it angle) defined bya shear design of the Wollaston prism 108 and its material properties. The two beams will be polarized according to the optical axis of the tWo right angle ptisans. In an embodiment die Wollaston prism 108 receives t be Ppolarized light 119 reflected from the wafer 103. In an instance, die Wottaston prisro 108 is oriented with a principle axis at O degrees.

[0046] The inspection system 100 can als© use a half-wave plate 107 such that the half-wave plate 107 minimizes the retardation non- ty across a pupil aperture on the WoUaStcm prism 108. 1¾e half-wave plate ;107 can be disposed in the light path 116 such that it rotates the p polarized light 119 By 45 degrees. [0047] A correction lens Optic 109 can be disposed in the tight path 116, The correction lens optic 109 may provide correction for PIC when using a dark field. However, there may be different aberratkms at different wavelengths; Two wavelengths may be used m the inspection system 100, _; snchasUyZå>F at approxirnatejy 266 nm and PCC at approximately 305 mn. Oth» wavelengths am possible; liV/bF canbe single of broad Wavelength from, for example, extreme ultraviolet (EtTV) to infrared. The PCC Wavelength may be similar to the UV7DF Wavelength provided that tbe fwo wavelength optical sources can be separated bydiebroie mirrorlU that allows ½ two tight paths with different wavelength groups.

[8048] A mirror llO in tie fight path 116 can receive the P polarized light 119 and S polarized light 120 from the WoUaston prism. The mirror 110 may Be a fold minor Or Other types of mitrdiS.

[8049] An objective lens assembly 112 can be disposed in the ¾ght path P6. The objective lens assembly 112 edn include more than two lenses (e g., 11 or 12 lenses) and can use dark field and/or PIC. The objective km assembly 112 can operate at two wavelengths, [0050] The correction fens optic 109, the mirror 110, and die objective tens assembly 112 ate configured to focus the P polarized fight 119 mid the S polarized light 120 onto the stage 102, The P polarized fight and the S polarized light 120 are separated in a shear direction of the

Wollaston prism 108 The P polarized fight 119 and the S polarized tight 120 teflectedfrom the wafer 103 can be cOitibined af the Wollaston prism 108. ¾.EIQ. 1 , fire P polarized light 119 afid tjbte

S polarized tight 120 are illustrated by dashed fiues.

[0051] The inspection system can include a dichrbic mirror 111 in the light path 116 between the objective tens assembly 112 add the inirrot 110. The dichroic mirror l 11 can direct Si polarized fight 120 tetiected from the wafer 103 at the daife field/bright fieldsensor 113. The dark field/hright field sensor 113 can receive the S polarized light 120. In an instance, the dark field/bright field sensor 113 receives a first wavelength of light reflected from the wafer 103.

[9052] Collection optics 114 can be disposed in the light path 116 between tiie polarizer 106 and the TDl-CCD sensor 115, Collection optics 1 M can include spherical positive and negative lenses, abortion compensation optics, zoom mechanisms, and/or other components that translate Wider 103 patterns or images to tjte TDTCCp sensor 115. In an instance, the collection optics 114 can be a tube tens that forms an; image on the TDI-CCD sensor 115 that is in focus and has the desired magnification

[0053] A processor 117 is in electronic communication with the dark field/bright field sensor

113 and the TDI-CCD sensor 115 , The processor 117 also may be cotipied to thecomponents of the inspection system 100 m any suitable manner (e,g„ via one or rnore transmission media, which may include wired and/or wireless tr ansmission media) such that the processor 117 can receive output. The processor I17 niay be config«red to perfbnn a number of functions hsmg the output, The inspection system 100 canreeeive mstmetions or other information from the processor 117 The processor 117 and/or the etectronie data storage unit 118 Optionally may he in electronic

communication With another Wafer inspection tool, a wafer metrology tool, or a wafer review tool (not ilhistrated) to receive additional information or send insteufitbns.

[0054] The processor 117, other System^ or othersubsystem(s) described herein may be part of various systems, including apersonal computer system, image computer, mainframe computer system, workstation, network appliance, internet appliance, or other device. The subsysten$(s) or system(s) may also include any suitable processor known in the art, such as a parallel processor. & addition, the subsysten^s) or system(s) may include a platform with higli- speedprocessing and software, either as a standalone or a networked tool

[0055] The processor 117 and electronic data storage unit 118 may be disposed in or otherwise part of the inspection system lOO or another device, fir an exainple, theprocessor 117 and electronic data storage unit 118 may be part of a standalone control unit or in a centralized quality control unit. Multiple processors 117 or electronic data storage units 118 may be used.

[0056] The processor 117 may be implemented m practice by any combination of bardware, software, and firmware. Also* its functions as described herein may be performed by one unit _» or divided up among different components, eaeh bfw3tiehWy ¼iinpleiiiiti™ted in turn by any combination of hardware, software and firmware- Program code or instructions for the processor 117 to implement various methods and fimctiolis may be stored in readable storage medk, such as a memoiy in the dectronic data storage unit 118 or other memory

[0057] If the inspection system 100 includes more than one processor 117, then the different subsystems may be coupled to each Otber snch that images, data, information, instructions, etc. can be sent between the subsystems. For example, one subsystem may be coupled to additional sub&yStem(s) by any suitable tiamfinssioii media, which may include airy suitable wiredand/or wireless transmission media known in the art. Two or more ofsuch subsystems may also be effectively coupled by a shared computer-readable storage medhim (not shown).

[0058] The processor 117 maybe configured to perfcrm a number of fiinctions using the output of the inspection system 100 or other output For instance, the processor 1.11 may be configured to send the butppt to an electronic data dotage ufift 118 or another storage medium- The processor 117 may be further configured as described herein.

[0059] The processor 117 may be configured according to any of the embodiments described herein. The processor 117 also may be configured to perforin other functions or additional steps usingthe output of the infection system 100 orusing images or data from other sources. [0060] Various steps, Sanctions, and/or operations of inspection system 100 and the methods disclosed herein are carried but by one or more of file following: electronic circuits, logic gates, multiplexers, programmable logic devices, ASICs, analog or digital controis/swftches,

microcontrollers, or Computing systems. Program instructidns implementing methods such as those described herein may be transmitted over or stored on carrier mediuoi The carrier medium may include a storage medium such as a read-only memory, a random access memory, a magnetic or optical disk, a non-volatile memory, a solid state memory, a magnetic tape, and the like. A carrier medium may inciude a transmission medium such as a Wire, cable, or wireless transmission link,

For instance, the various steps described throughout the present disclosure may be carried out by a single processor ί 17 or, alternatively, ίhaΐίίrίέ processors 117. Moreover, different sub-systems of file inspection system 1018 may include one or more computing at logic systems. Therefore, the above descr¾rtion should not be interpreted as a limitation on the present disclosure but merely an illustration.

[0061] In an instance, the processor 117 is in communication with the inspection system 100. The processor 117 canbe configttred to stream digitized CCD image data. form and process images, and/or separate images with defects. This can include finding phase defects hr finding dark field defects.

[0062] Lίi additional embodiment relates to a non-transitory con¾»ifer-readable medium storing program instructions executable on a controller for performing a computer-implemented methodibr imaging a Wafer and/or finding defects, as disclosed herem. In particular, as shown in

FIG. 1 , electronic data storage unit 118 or other storage medium may contain non-transitory computer-readable medium that includes program instructions executable on the processor 117 The computer-in¾)lemenied method may inehide any step(s) ofany method(s) described herein- including method 100. [0063] In an embodiment of the inspection system 100, the illumination source 101 canbe a single wavelength laser or an LED with wavelength ranging from deep ultraviolet (DUV) to visible to mfiared. Light from the light source 101 illuminates the field stop 104. The field stop 104 canbe a controlled variable field-stop for an R-Q scanning system, alk>wing its tangential width to be varymg in assoeiatton with scatttting radius. Time-delay-integration bhir can be controlled. [0064] The coUimation optics assembly 105 collimates foe light and sends it to foe polarizer 106, which allows for P polarized light 119 to pass through add s polarized l¾ght 120 lobe reflected. A half-wave plate 107 can be used to rotate the p polarization light hy 45 degrees before it enters the Wollaston prism 108 oriented with its principle axis at 0 degrees. The Wollaston prism 108 splits foe incoming beam into P and S beams of equal parts. Through the eoireetfou lens optics 109, mirror HO, and foe ohjective/tens assembly 112, which can be configured for foe first wavelength imager and transparent for PGC wavelength, the P and S beams can be focused onto foe inspection Surfoce of the wafer 103. The P and S beams are separated in the shear direction 0 f foe Wollaston prism lOS. In an instance, at O degrees definedby P polarization directionofthe polarizer 106. The Wollaston prism 108 can be configured such that foe shear spacing is afew pixels of TDl-CCD sensor image. Multiple Wollaston prisms 108 can be used and made user-selectable in & particular scamiing system or setup for optimal signal to noise and spatial resolution.

[0065} OQ the collection path, both P and S refiected beams combine atthe Wollastonprism

108 carrying relative phase-difference information froma defeet on the wafer 103. Interference is yielded at the polai½r 1Q6 atid js reflected fo the TDI-C&D sensor 115,

[0066] The correction lens optic 109 can be configured to provide a high level of image clarity for the PCC subsystem at the second wavelength when the objective lenses inthe objective lens assembiy 112 are designed for the first wavelengtfa. Alternatively. a correction fens optic 109 can be configured for the &st wavelength if the objective lens assembly 112 re configured for the Second inspector wavelengtlL

[0067] In an instance, the TDl sensor can he a parallel inspector with a second Wavelength. Dispersion compensation optics can be added to provide the desired imaging qiialtfy.

[0068] An imaging D1C design incorporating a T0I sensor also can he used in a rotationally- scanning inspector application and can use a radius-based variable light-source field stop that nuhtinizes TDl image blurring in both radial and tangential directions.

[0069] FIG. 2 illustrates a comparison between illumination with a tooadband LED and illumination with a laser. Jh FIQ.2, foe left image illustrates illumination with a broadband LED and theright image illustrates illumination with a laser. For E¾G applications, a laser can provide high light intensity fevels and wavelength purity (e.g., narrow line-width). However, the narrow line- width of the laser can cause coherence-induced surface noise effeet, such as On relativelyrough surfaces. This can make it diffkult to detect small defects or particles. FåG, 2 illustrates the surface noise effect horn an LED versus a laser horn a PCC subsystem. [0070] Referencing the PCC subsystem layout, FIG. 3 and HG; 4 illustrate optical FdV in boxes that cover the entire TDI-CCD sensor and a CCD sensor that is time-delay-mtegratkm in nature. The different boxes represent the FoV for S and F polarized lights which combine at Wollaston prism and project oh to Tpi-C03 as otie bo^ Atefohtively, it can be viewed that an individualpixel on TDtCCD corresponds to two pixels on inspectkm surface for the P and S polarized light Shear direction can be selected akmg the direction of scam althdugh it can be tilted (e g-, 45 degree tilt in MG, 3) forbenefit of detection in both orthogonal axes as shown in FIG. 3, Winch can include optimizing the polarizer and half-wave plate orientations. White keeping the DIC angle of incidence to a smallpixel to achieve a higb spatial resolution, the inspection system 100 can maintain a relatively large FoV and, therefore, inspect a large area simultaneously with a high dehshy CCD sensor; The angle of incidence can be normal incidence (i.e„ 0 degrees to wafer surface 103). Tolemnce fc subject to the design of the inspection system 100. The EbV refers to foe area thatis viewable on the CCD sensor. M an instance, fo½ may 1000 pan x 100 pm. Gther FOVs ¾r6 possible and are subject to optical design and/or magnification selection to have larger or smaller viewable area of foe wafer. Pixel resolution may be proportional to the viewable area size (dr FoV size). In ah instance, this is a parallel DIC system that ehn employ Nf by N number of photo detectors where M and N are CCD sensor pixel dimensions. When foe CGD sensor is a TDI-CC33 for a scanning system, light budget can be reduced M times where M is fob T0Ϊ photon integration dimension. Conversely /with foe same amount of lightfoe CCD frame rate dan be increased M times. In such applications; traditional CCD sensor usage may be limited by physically capable light budget ed frame rate;

[0071] Pixels canmo ve wifo a moving object. In ah embodiment, foe pixel « synched With a moving object. Thus; the image cm remain m focus When foe inage is moving. This cm be beneficial for loyr light appKcatiohs, [6072] FIG 5 illustrates image blurring control. In FIG 5, R is the radial length and Q is the rotational movement. In an R-q based scanning inspector system, circular rotation of inspection sur¾e can be employed The linear spatial integratiomiatureof a CartesianTDI-CCD sensor incuts accumulating photons from pixelxin rows. When the scanning radius becomes smaller, imagebhirring occurswbeh scanning curvature exceeds the row pfpixels: FIG. 5 depicts two blurring effects namely tangential blurring andradial blurring.

[6673] Radially, due to therdtational nature ofimage motion, a pixel oil inspection surface moves the trajectory of an arc on (be TDI-CCD. Wjth radihs reducing gradual, the cUryattoc of the arc increases to the point pixel crosses into the next row of TDI-CCD pixels resulting in radial blurring effect Similarly, within FoV, when TDI clocking is synchronized to the pixel in the middle ofthe TDI-CCD radm¾, ihe lower and higherrows experience effectively shorter or longer physical pixels resulting crossing over the adjacent tangential pixels (i.e., tangential blurring).

[6074] Blurring control can be used became the wafer may be rotating while secured to the stage the image can be moving ¼ an arc, anil this can cause problems near the center, the variable slit cian reduce blurring effect so it still appears as a line to a sensor. The Slit in the variable sift can reduce to zero or near zero toward the center of the wafer. The variable slit can be synehed with motion of thd Stage.

[0075] The variable field stop can be mod to minimize blurring effects on both radial and tangential images. This ½ shown in FIG 6 andFIG. 7. lire variable field Stop, which is an example of the field stop 104in FIG. 1, is disposed downstream ofthe illumination. source. The collimating optics assembly 105 can serve as illuminating optics. Tie variable field Stop is controlled with a motor ami at fiill gpen (ie^ fail FoV^ at the maximum scanning radius of the scanner. Its width is reduced linearly with respect to l/mdius (1/R). If some amount of blurring is tolerable, thevariable field stop reducing profile can start at a certain radius. TDI-CCD clocking can be radius dependent in such an R-Q scanning system. Therefore, light-budget may be considered while optimizing the VES profile such that blurring and light-budget are all within acceptable levels.

[0076] FIG, 8 & a block diagram of an embodiment of polarizing optics. As a cost-effective and space saving measure, a PCC design can adapt a polarizer aiid balf-wave plate combination opticaldesign. As depicted in Fid. 8, the polarizer and Wollaston prismatignto 0 degrees of their principle axis whereas the half-wave plate aligns to 2¼5 degrees. This allows for? polarized tight after the polarizer to be rotated 45 degrees relative to Wollaston prism principle axis. Therefore, eqnatiy amount P and S polarized light are produced after the Wollaston prism. Cte the reflection path, P and S polarized light combine at the Wollaston prism and continue movinganother 45 degrees resulting in S polarjceed light at the polarizer, which is tfaenreflected to the TDI-CCD detector. Such a design is cost effective and also results in higher light efficiency In addition, given the scanning nature of PCC design, such a polarization optimization design orients the Wollaston prism in the smallest numerical aperture (NA) light propagation axis and, therefore, cap result in the lowest phase retardation uniformity across Fo V. [0077] In an instance, the inspectionsystem operates in R-q instead of perpendicitlar X and Y directions. The beams may need to be aligned in the R direction. A half-wave plate can prevent the two beams from being separated by 45 degrees. Thus, the polarizer can separate the beam into two beams and the half-wave plate can align the two beams together. A feiri -system can be used instead ofa half-wave plate to achieve the same result [0078] PIG. 9 is a flowchart of a method 200, At 201, a light beam is generated using an illumination source such as a bmadhaod LED. The light beam is directed from the illumination source through a field stop at 202, The light beam directed by the field stop is collimated using a collimating optics assemblyat 203. The field stop can be a cphMed variable field stop. A tangential width of the field stop is configured to vary with scanning radius whereby the tangential widthat aft end bfthe field stop is larger than at anopposite end of the field stop.

[0079] The tight beam is directed from the collimating optics assembly through a polarizer at

204. The light beam ¾ directed from the polarizer to a Wotiaston prism205. The Wollaston prism can be oriented with a principle axis at 0 degrees.

The light beam ½ directed from the Wollaston prism to a correction lens optic at 206. The light beam is directed from the correction lens optic to a mirror at 207, stich as a fold mirror. The ¾ht beam is directed toward a wafer on a stage through an objective lens assembly at 208. The correction lens critic, the mirror, arid the objective lens assembly are configured to focus P polarized light and S polarized light from the Wollaston prism onto the stage. The P polarized light and the S polarized light are separated in a shear direction of the Wollaston prism. [0081] The light beam reflected fromthe wafer on fee stage is split into a first light beam and a second light beam with a dichroic minor at 209, The light beamr effected from the wafer On fee stage is split wife a dichioie mirror into a first light beam and a second light beam at 209. Ihe first light beam is received with a dark fieid/bright field sensor at 210. The P polarized light and the S polarized light of fee second Hght beam are combined at fee Wollaston prism at 211. The second light beam ½m the Wollaston prism is received with a TOl-CC!D sensor at 212.

[0682] M fee method 200, fee polarizer dan be a polarizing beam splitter cube in the light path, The polarizing beam splitter can be configured to pasl P polarized light and reflect S polarized light [0083] The method 200 cap further include directing the fight beam tfarougha half wave plate feat rotates fee P polarized fight by45 degrees. The halfwave plate can be disposed between the polarizer and the Wollastonprism.

[0084] Eachof the steps oftbe mefeod may be performed as described herein. Tfaemethods also may iachide any other step{5) that ean he perfianned by the processor and/or computer mbsy6teio(s) or systen<s) described herein. Thestepscan beper formed by one or more computer systems, which may be configured according to any of the embodiments deseribed herein. In addition, the methods described above may be performed by any of the system embodiments described herein

[008®] Although the present disclosure has been described Wife respectto bine or more particular embodiments, it will be understood that other embodiments ofthe present disclosure may be made without departing from the scope of fee present disclosure. Henee, the present disctosure is deemed limited only by fee appended claims and the reasonable interpretation thereof