Title:
SCHOTTKY BARRIER DIODE
Document Type and Number:
WIPO Patent Application WO/2019/009021
Kind Code:
A1
Abstract:
Provided is a Schottky barrier diode which is configured from a Ga2O3 semiconductor, and which has a lower turn-on voltage than conventional Schottky barrier diodes. One embodiment of the present invention provides a Schottky barrier diode 1 which is provided with: a semiconductor layer 10 that is formed of a Ga2O3 single crystal; an anode electrode 11 that forms a Schottky junction with the semiconductor layer 10 and has a portion which is in contact with the semiconductor layer 10, while being formed from Mo or W; and a cathode electrode 12. This Schottky barrier diode 1 has a turn-on voltage of from 0.3 V to 0.5 V (inclusive).
Inventors:
SASAKI KOHEI (JP)
WAKIMOTO DAIKI (JP)
KOISHIKAWA YUKI (JP)
THIEU QUANG TU (JP)
WAKIMOTO DAIKI (JP)
KOISHIKAWA YUKI (JP)
THIEU QUANG TU (JP)
Application Number:
PCT/JP2018/022297
Publication Date:
January 10, 2019
Filing Date:
June 12, 2018
Export Citation:
Assignee:
TAMURA SEISAKUSHO KK (JP)
NOVEL CRYSTAL TECH INC (JP)
NOVEL CRYSTAL TECH INC (JP)
International Classes:
H01L29/872; H01L21/329; H01L29/06; H01L29/24; H01L29/47
Foreign References:
| JP5874946B2 | 2016-03-02 | |||
| JP2016112127A | 2016-06-23 | |||
| JP5874946B2 | 2016-03-02 |
Other References:
SASAKI, KOHEI ET AL.: "Ga2O3 Schottky barrier diode provided with trench MOS structure", THE JAPAN SOCIETY OF APPLIED PHYSICS (JSAP, vol. 64, 1 March 2017 (2017-03-01), pages 12-169, XP009517927
KOHEI SASAKI ET AL.: "Ga 0 Schottky Barrier Diodes Fabricated by Using Single-Crystal P-GazCb (010) Substrates", IEEE ELECTRON DEVICE LETTERS, vol. 34, no. 4, April 2013 (2013-04-01), pages 493 - 495, XP011497999, DOI: 10.1109/LED.2013.2244057
TOSHIYUKI OISHI ET AL.: "Conduction mechanism in highly doped P-Ga C> (-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, 2016, pages 030305
T. SHIMIZU ET AL., PROCEEDINGS OF 2001 INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, pages 243 - 246
V. KHEMKA ET AL., IEEE ELECTRON DEVICE LETTERS, vol. 21, no. 5, May 2000 (2000-05-01), pages 286 - 288
HIROYUKI MATSUNAMINOBORU OTANITSUNENOBU KIMOTOTAKASHI NAKAMURA: "Technology of Semiconductor SiC and its Application", 30 September 2011, NIKKAN KOGYO SHIMBUN, LTD., pages: 355
See also references of EP 3651210A4
KOHEI SASAKI ET AL.: "Ga 0 Schottky Barrier Diodes Fabricated by Using Single-Crystal P-GazCb (010) Substrates", IEEE ELECTRON DEVICE LETTERS, vol. 34, no. 4, April 2013 (2013-04-01), pages 493 - 495, XP011497999, DOI: 10.1109/LED.2013.2244057
TOSHIYUKI OISHI ET AL.: "Conduction mechanism in highly doped P-Ga C> (-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, 2016, pages 030305
T. SHIMIZU ET AL., PROCEEDINGS OF 2001 INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, pages 243 - 246
V. KHEMKA ET AL., IEEE ELECTRON DEVICE LETTERS, vol. 21, no. 5, May 2000 (2000-05-01), pages 286 - 288
HIROYUKI MATSUNAMINOBORU OTANITSUNENOBU KIMOTOTAKASHI NAKAMURA: "Technology of Semiconductor SiC and its Application", 30 September 2011, NIKKAN KOGYO SHIMBUN, LTD., pages: 355
See also references of EP 3651210A4
Attorney, Agent or Firm:
TAMURA CORPORATION (JP)
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