Title:
SCHOTTKY BARRIER DIODE
Document Type and Number:
WIPO Patent Application WO/2023/095395
Kind Code:
A1
Abstract:
[Problem] To reduce the on-resistance while ensuring a sufficient reverse breakdown voltage in a Schottky barrier diode using a gallium oxide. [Solution] A Schottky barrier diode 1 comprises: a semiconductor substrate 20 that is composed of a gallium oxide; a drift layer 30 that is composed of a gallium oxide and provided on the semiconductor substrate 20; an anode electrode 40 that comes in Schottky contact with the drift layer 30; and a cathode electrode 50 that comes in ohmic contact with the semiconductor substrate 20. The drift layer 30 includes central trenches 61 having the anode electrode 40 embedded therein. The bottom surfaces of the central trenches 61 are covered with insulating films 70 without being in contact with the anode electrode 40, and at least part of side surfaces of the central trenches 61 is in Schottky contact with the anode electrode 40 without being covered by the insulating films 70. It is thus possible to reduce the on-resistance without increasing the impurity concentration in the drift layer.
Inventors:
ARIMA JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
Application Number:
PCT/JP2022/030765
Publication Date:
June 01, 2023
Filing Date:
August 12, 2022
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L29/872; H01L29/06; H01L29/41; H01L29/47; H01L29/861; H01L29/868
Domestic Patent References:
| WO2020039971A1 | 2020-02-27 |
Foreign References:
| JP2021097168A | 2021-06-24 | |||
| JP2021097169A | 2021-06-24 | |||
| JP2004521480A | 2004-07-15 | |||
| US8878327B2 | 2014-11-04 | |||
| JP2009177028A | 2009-08-06 |
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (JP)
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