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Title:
SCHOTTKY DIODE AND POWER CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2023/185195
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors, and particularly relates to a Schottky diode and a power circuit. The Schottky diode comprises: a first layer; a second layer, which is in contact with the first layer, wherein the first layer is one of a semiconductor layer and a metal layer, the second layer is the other one of the semiconductor layer and the metal layer, and there is a Schottky barrier between the first layer and the second layer; and a carrier provision layer, which is coupled to the first layer and is used for increasing the proportion, in the total number of carriers in the first layer, of the number of first carriers in the first layer, wherein the energy of the first carriers is lower than the height of the Schottky barrier when the diode is in an off state, and when the Schottky diode enters an on state from the off state, the height of the Schottky barrier is reduced, such that the first carriers get over the Schottky barrier and enter the second layer, or the width of the Schottky barrier is reduced, such that the first carriers pass through the Schottky barrier in a tunneling manner and enter the second layer. The Schottky diode can realize quick switching from an off state to an on state.

Inventors:
WANG JIALE (CN)
FAN ZONGJIAN (CN)
ZHANG QIANG (CN)
HOU ZHAOZHAO (CN)
DONG YAOQI (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2023/070811
Publication Date:
October 05, 2023
Filing Date:
January 06, 2023
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/872; H01L21/329; H01L27/06
Foreign References:
CN115101599A2022-09-23
CN101286450A2008-10-15
CN113257924A2021-08-13
JP2009032840A2009-02-12
Other References:
GAN, WEIZHUO ET AL: "Design and Simulation of Steep-Slope Silicon Cold Source FETs with Effective Carrier Distribution Model", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 6, 4 May 2020 (2020-05-04), XP011789607, ISSN: 1557-9646, DOI: 10.1109/TED.2020.2988855
Attorney, Agent or Firm:
E-TONE INTELLECTUAL PROPERTY FIRM (GENERAL PARTNERSHIP) (CN)
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