Title:
SCHOTTKY DIODE AND PREPARATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/235796
Kind Code:
A1
Abstract:
Provided are a Schottky diode and a preparation method thereof. A Schottky diode is provided. A Schottky diode comprises: a gallium oxide layer which is a semiconductor layer doped with a first-type dopant; a cathode forming an ohmic contact with the gallium oxide layer; and an anode having a Schottky-contact metal layer forming a Schottky contact with the gallium oxide layer. The gallium oxide layer comprises an intermediate layer coming into contact with the interface with the Schottky-contact metal layer and containing a second-type dopant which has the opposite conductivity type to the first-type dopant, wherein the concentration of the second-type dopant becomes gradually lower in the direction away from the interface with the Schottky-contact metal layer.
Inventors:
RIM YOU SEUNG (KR)
KANG TAI YOUNG (KR)
KYOUNG SIN SU (KR)
KANG TAI YOUNG (KR)
KYOUNG SIN SU (KR)
Application Number:
PCT/KR2020/004013
Publication Date:
November 26, 2020
Filing Date:
March 24, 2020
Export Citation:
Assignee:
POWER CUBESEMI INC (KR)
International Classes:
H01L29/872; H01L21/02; H01L21/285; H01L21/324; H01L29/47; H01L29/66
Domestic Patent References:
| WO2018183374A1 | 2018-10-04 |
Foreign References:
| KR20140095080A | 2014-07-31 | |||
| JP2017112126A | 2017-06-22 | |||
| JPH01295459A | 1989-11-29 | |||
| JP2018170509A | 2018-11-01 |
Attorney, Agent or Firm:
HONG, Seung Hoon (KR)
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